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Start Over Author "Marti D" Journal applied physics letters
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4. n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts.

Author

Lugani, L., Malinverni, M., Tirelli, S., Marti, D., Giraud, E., Carlin, J.-F., Bolognesi, C. R., and Grandjean, N.

Subjects
CRYSTAL growth, GALLIUM nitride, AMMONIA, MOLECULAR beam epitaxy, ELECTRON mobility
Abstract

We report on the low-temperature growth of heavily Si-doped (>1020 cm-3) n -type GaN by 4 N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 x 10-4 Ω x cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n+-GaN/2 dimensional electron gas contact resistivity of 0.11 Ω x mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices. [ABSTRACT FROM AUTHOR]

Published
2014
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