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Beta-phase gallium oxide (β -Ga2O3) is a promising semiconductor for high frequency, high temperature, and high voltage applications. In addition to the β -phase, numerous other polymorphs exist and understanding the competition between phases is critical to control practical devices. The phase formation sequence of Ga2O3, starting from amorphous thin films, was determined using lateral-gradient laser spike annealing at peak temperatures of 500–1400 °C on 400 μs to 10 ms timescales, with transformations characterized by optical microscopy, x-ray diffraction, and transmission electron microscopy (TEM). The resulting phase processing map showed the γ -phase, a defect-spinel structure, first nucleating under all annealing times for temperatures from 650 to 800 °C. The cross-sectional TEM at the onset of the γ -phase formation showed nucleation near the film center with no evidence of heterogeneous nucleation at the interfaces. For temperatures above 850 °C, the thermodynamically stable β -phase was observed. For anneals of 1–4 ms and temperatures below 1200 °C, small randomly oriented grains were observed. Large grains were observed for anneals below 1 ms and above 1200 °C, with anneals above 4 ms and 1200 °C resulting in textured films. The formation of the γ -phase prior to β -phase, coupled with the observed grain structure, suggests that the γ -phase is kinetically preferred during thermal annealing of amorphous films, with β -phase subsequently forming by nucleation at higher temperatures. The low surface energy of the γ -phase implied by these results suggests an explanation for the widely observed γ -phase inclusions in β -phase Ga2O3 films grown by a variety of synthesis methods. [ABSTRACT FROM AUTHOR]

β-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultrawide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from β-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to AlGaN/GaN interfaces, β-(AlxGa1−x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas where joule heating is localized. The thermal properties of β-(AlxGa1−x)2O3/Ga2O3 are the key for heat dissipation in these devices, while they have not been studied before. This work reports the temperature dependent thermal conductivity of β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature compared to that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn doping. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of β-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications, especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices. [ABSTRACT FROM AUTHOR]

We report the growth of (001)-oriented VO2 films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO2 surface. Another key limitation is interdiffusion with the (001) TiO2 substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO2 films with abrupt MIT behavior. [ABSTRACT FROM AUTHOR]

We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO3 films deposited by reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cation stoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity (k33), with the greatest decrease in films of the same composition observed for films containing planar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivity can be modified by as much as 80%--from 11.5W m-1K-1 for stoichiometric homoepitaxial SrTiO3 to 2W m-1K-1 for strontium-rich homoepitaxial Sr1þdTiOx films--by incorporating (SrO)2 Ruddlesden-Popper planar defects. [ABSTRACT FROM AUTHOR]

We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of ≈0.5 nm layer of Hf between a Pt film and a thin, ≤2 nm, Fe60Co20B20 ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet's absorption of the SHE generated spin current. [ABSTRACT FROM AUTHOR]

Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO4 (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190°C, nanocrystalline films with an X-ray peak at 2h = 30° (009 planes) developed with increasing c-axis normal texturing up to 310°C. Under optimal conditions (310°C, 10% O2), films exhibited a c-axis texture full-width half-maximum of 20°. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of ±9° over a 15 x 15 nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed. [ABSTRACT FROM AUTHOR]

Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO4 (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190 °C, nanocrystalline films with an X-ray peak at 2θ = 30° (009 planes) developed with increasing c-axis normal texturing up to 310 °C. Under optimal conditions (310 °C, 10% O2), films exhibited a c-axis texture full-width half-maximum of 20°. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of ±9° over a 15 x 15 nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed. [ABSTRACT FROM AUTHOR]

High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III–V semiconductors have long proven elusive. High-permittivity (high-κ) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath HfO2 during growth, while thinning occurs during Al2O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at ∼600 °C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments. [ABSTRACT FROM AUTHOR]

Beta-phase gallium oxide (β -Ga2O3) is a promising semiconductor for high frequency, high temperature, and high voltage applications. In addition to the β -phase, numerous other polymorphs exist and understanding the competition between phases is critical to control practical devices. The phase formation sequence of Ga2O3, starting from amorphous thin films, was determined using lateral-gradient laser spike annealing at peak temperatures of 500–1400 °C on 400 μs to 10 ms timescales, with transformations characterized by optical microscopy, x-ray diffraction, and transmission electron microscopy (TEM). The resulting phase processing map showed the γ -phase, a defect-spinel structure, first nucleating under all annealing times for temperatures from 650 to 800 °C. The cross-sectional TEM at the onset of the γ -phase formation showed nucleation near the film center with no evidence of heterogeneous nucleation at the interfaces. For temperatures above 850 °C, the thermodynamically stable β -phase was observed. For anneals of 1–4 ms and temperatures below 1200 °C, small randomly oriented grains were observed. Large grains were observed for anneals below 1 ms and above 1200 °C, with anneals above 4 ms and 1200 °C resulting in textured films. The formation of the γ -phase prior to β -phase, coupled with the observed grain structure, suggests that the γ -phase is kinetically preferred during thermal annealing of amorphous films, with β -phase subsequently forming by nucleation at higher temperatures. The low surface energy of the γ -phase implied by these results suggests an explanation for the widely observed γ -phase inclusions in β -phase Ga2O3 films grown by a variety of synthesis methods. [ABSTRACT FROM AUTHOR]

Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO4 (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190°C, nanocrystalline films with an X-ray peak at 2h = 30° (009 planes) developed with increasing c-axis normal texturing up to 310°C. Under optimal conditions (310°C, 10% O2), films exhibited a c-axis texture full-width half-maximum of 20°. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of ±9° over a 15 x 15 nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed. [ABSTRACT FROM AUTHOR]

Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO4 (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190 °C, nanocrystalline films with an X-ray peak at 2θ = 30° (009 planes) developed with increasing c-axis normal texturing up to 310 °C. Under optimal conditions (310 °C, 10% O2), films exhibited a c-axis texture full-width half-maximum of 20°. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of ±9° over a 15 x 15 nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed. [ABSTRACT FROM AUTHOR]