1. Disruptive effect of Dzyaloshinskii-Moriya interaction on the magnetic memory cell performance
- Author
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Vicent Cros, Vitaliy Lomakin, Alexey Vasilyevitch Khvalkovskiy, M. Cubukcu, Nicolas Reyren, M. Kuteifan, Joao Sampaio, Dmytro Apalkov, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Moscow Institute of Physics and Technology [Moscow] (MIPT), University of California [San Diego] (UC San Diego), and University of California
- Subjects
010302 applied physics ,Physics ,Random access memory ,Magnetoresistive random-access memory ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Magnetization ,Amplitude ,0103 physical sciences ,Magnetic layer ,Thermal stability ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,0210 nano-technology - Abstract
International audience; In order to increase the thermal stability of a magnetic random access memory cell, materials with high spin-orbit interaction are often introduced in the storage layer. As a side effect, a strong Dzyaloshinskii-Moriya interaction (DMI) may arise in such systems. Here, we investigate the impact of DMI on the magnetic cell performance, using micromagnetic simulations. We find that DMI strongly promotes non-uniform magnetization states and non-uniform switching modes of the magnetic layer. It appears to be detrimental for both the thermal stability of the cell and its switching current, leading to considerable deterioration of the cell performance even for a moderate DMI amplitude.
- Published
- 2016
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