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An often-overlooked property of transition metal oxide thin films is their microscopic surface structure and its effect on the electronic properties in the ultrathin limit. Contrary to the expected conservation of the perovskite stacking order in the (001) direction, heteroepitaxially grown SrIrO3 films on TiO2-terminated SrTiO3 are found to exhibit a terminating SrO surface layer. The proposed mechanism for the self-organized conversion involves the adsorption of excess oxygen ions at the apical sites of the IrO2-terminated surface and the subsequent decomposition of the IrO6 octahedra into gaseous molecular IrO3 and the remaining SrO-terminated surface. Whereas the ab initio calculated electronic structure of SrO-terminated SrIrO3 in the monolayer limit exhibits a striking similarity to bulk Sr2IrO4, the broken octahedral symmetry at the IrO2-terminated surface would mix the otherwise crystal field split e(g) and t(2g) states, resulting in distinctly different low-energy electronic states. Published under license by AIP Publishing.

The perovskite BaBiO3 (BBO) is a versatile oxide parent material which displays superconductivity upon p-doping, while n-doping has been predicted to establish a wide-bandgap topological insulator phase. Here, we report on a mechanism that allows for epitaxial deposition of high-quality crystalline BBO thin films on SrTiO3 substrates despite a significant lattice mismatch of as large as 12%. It is revealed that the growth takes place through domain matching epitaxy, resulting in domains with alternating lateral sizes of 8 and 9 BBO unit cells. In particular, a structurally modified interface layer is identified which serves as a nucleation layer for the BBO films and gradually relieves the strain by decoupling the film lattice from the substrate. The BBO growth mechanism identified here may be prototypical for prospective thin film deposition of other perovskites with large lattice constants.

Electron holography at medium resolution simultaneously probes projected electrostatic and magnetostatic potentials as well as elastic and inelastic attenuation coefficients with a spatial resolution of a few nanometers. In this work, we derive how the elastic and inelastic attenuation can be disentangled. Using that result, we perform the first three dimensional tomographic reconstruction of potential and (in) elastic attenuation in parallel. The technique can be applied to distinguish between functional potentials and composition changes in nanostructures, as demonstrated using the example of a GaAs-Al0.33Ga0.67As core-shell nanowire. (C) 2014 AIP Publishing LLC.

Static electromagnetic stray fields around nanowires (NWs) are characteristic for a number of important physical effects such as field emission or magnetic force microscopy. Consequently, an accurate characterization of these fields is of high interest and electron holographic tomography (EHT) is unique in providing tomographic 3D reconstructions at nm spatial resolution. However, several limitations of the experimental setup and the specimen itself are influencing EHT. Here, we show how a deliberate restriction of the tomographic reconstruction to the exterior of the NWs can be used to mitigate these limitations facilitating a quantitative 3D tomographic reconstruction of static electromagnetic stray fields at the nanoscale. As an example, we reconstruct the electrostatic stray field around a GaAs-AlGaAs core shell NW and the magnetic stray field around a Co2FeGa Heusler compound NW.

Electron holography in the transmission electron microscope (TEM) offers the spatial and signal resolution for studying effects like Fermi level pinning or dopant concentration variations important for the design of modern electronic devices. To overcome the loss of information along the projection direction, surface effects, and surface damage due to TEM specimen preparation, we apply electron holographic tomography to analyze the 3D potential distribution of semiconductor samples prepared by focused-ion-beam. We observe mid-band gap pinning of the Fermi level at Si surfaces but valence band pinning at Ge surfaces. The pinning extends over tens of nanometers into the bulk.