Search

Your search keyword '"Lu, J. G."' showing total 27 results
Start Over Author "Lu, J. G." Journal applied physics letters
27 results on '"Lu, J. G."'

1. In situ observation of structure and electrical property changes of a Ga-doped ZnO/graphene flexible transparent electrode during deformation

Author

Zhang, L. Q., primary, Gao, Z. F., additional, Tu, Z. Q., additional, Liu, C., additional, Qi, Y., additional, Yang, F., additional, Yang, W., additional, Jiang, D. Q., additional, Guo, Y. P., additional, Ye, Z. Z., additional, Lu, J. G., additional, Hou, X. Y., additional, Li, Y. F., additional, and Cui, L. S., additional

Published
2014
Full Text
View/download PDF

21. Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

Author

Cong, G. W., primary, Peng, W. Q., additional, Wei, H. Y., additional, Han, X. X., additional, Wu, J. J., additional, Liu, X. L., additional, Zhu, Q. S., additional, Wang, Z. G., additional, Lu, J. G., additional, Ye, Z. Z., additional, Zhu, L. P., additional, Qian, H. J., additional, Su, R., additional, Hong, C. H., additional, Zhong, J., additional, Ibrahim, K., additional, and Hu, T. D., additional

Published
2006
Full Text
View/download PDF

25. Rational synthesis and tunable optical properties of quasialigned Zn1-xMgxO nanorods.

Author

Lu, J. G., Zhang, Y. Z., Ye, Z. Z., Zeng, Y. J., Huang, J. Y., and Wang, L.

Subjects
*NANOSTRUCTURES, *OPTICAL properties, *ZINC compounds, *MAGNESIUM compounds, *LUMINESCENCE, *EXCITON theory
Abstract

Quasialigned, single-crystal Zn1-xMgxO (x=0–0.32) nanorods were synthesized on Si substrates by thermal evaporation. Zn1-xMgxO nanorods grew along the [0001] crystal direction and had uniform hexagonal planes with diameters of 420–120 nm. The predominant ultraviolet luminescence could be tuned from 379 (x=0) to 305 nm (x=0.32) at room temperature. This blueshift indicated the band gap engineering in Zn1-xMgxO nanorods. Temperature-dependent photoluminescence was used to illustrate the free-exciton emission from Zn1-xMgxO nanorods. The exciton binding energy decreased from 59 (x=0) to 49 meV (x=0.18) and then increased to 54 meV (x=0.32). [ABSTRACT FROM AUTHOR]

Published
2007
Full Text
View/download PDF

26. Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films.

Author

Lu, J. G., Fujita, S., Kawaharamura, T., Nishinaka, H., Kamada, Y., and Ohshima, T.

Subjects
*ZINC oxide thin films, *CHEMICAL vapor deposition, *WIDE gap semiconductors, *SEMICONDUCTOR doping, *ALUMINUM, *EXCITON theory
Abstract

Transparent conducting Al-doped Zn1-xMgxO thin films were grown on glass substrates by chemical vapor deposition. The resistivity could be lowered to 10-3 Ω cm with optical transmittance above 85% in visible regions. The influence of carrier concentration on band-gap shift in Zn1-xMgxO alloys was systematically studied. The shift of energy gap could be fully explained by the Fermi-level band filling and band-gap renormalization effects. As the Mg content increased, the electron effective masses in Zn1-xMgxO (x=0–0.21) alloys increased from 0.30m0 to 0.49m0. The Al-doping efficiency was reduced with the increase in alloy composition. [ABSTRACT FROM AUTHOR]

Published
2006
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results