Search

Femtosecond laser processing technology has been used to achieve controlled processing of microtips array on the surface of polycrystalline LaB6 blocks. Under the condition of ensuring the integrity of the geometric morphology of the tips array, the tips with a height of 10 μm and a radius of curvature of 1 μm can be processed. The distribution of tips in the array is uniform, the morphology is complete, the crystal structure and physical phase of LaB6 have not changed after processing, which breaks through the technical problems of difficult processing and poor geometry consistency about polycrystalline rare-earth hexaboride tips emitter, and the processing area is no longer limited by the small size of single crystals. The field emission performance test indicated that the turn-on electric field is 2.8 V/μm, and the current density is 467.9 mA/cm2 when the applied electric field reached 9.4 V/μm. [ABSTRACT FROM AUTHOR]

Field-effect transistors based on semiconductor integration technology have come to a bottleneck, while electric field control of magnetism has great potential for applications in next-generation magnetic memory and calculators based on electron spins. Magnetic properties manipulation from a mechanism of ion migration driven by an electric field has the advantages of low energy consumption, nonvolatility, reproducibility, and durability. Here, we introduce a solid-state integratable hydrogen ion storage electrolyte silicon phosphate as the gate to achieve reversible control of magnetoresistance, magnetism, and magnetic interaction in the La1−xSrxMnO3/SrTiO3 ferromagnetic system. The controllable double-exchange interaction and spin scattering mechanism sketch the theoretical physical picture for these results. This work is expected to open up additional opportunities in the translation of electric control of magnetism into practical applications. [ABSTRACT FROM AUTHOR]

Field-effect transistors based on semiconductor integration technology have come to a bottleneck, while electric field control of magnetism has great potential for applications in next-generation magnetic memory and calculators based on electron spins. Magnetic properties manipulation from a mechanism of ion migration driven by an electric field has the advantages of low energy consumption, nonvolatility, reproducibility, and durability. Here, we introduce a solid-state integratable hydrogen ion storage electrolyte silicon phosphate as the gate to achieve reversible control of magnetoresistance, magnetism, and magnetic interaction in the La1−xSrxMnO3/SrTiO3 ferromagnetic system. The controllable double-exchange interaction and spin scattering mechanism sketch the theoretical physical picture for these results. This work is expected to open up additional opportunities in the translation of electric control of magnetism into practical applications. [ABSTRACT FROM AUTHOR]