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With the development of artificial intelligence technology, it remains a challenge to improve the resistive switching performance of next-generation nonvolatile ferroelectric memristor device (FMD). Here, we report an epitaxial Na0.5Bi0.5TiO3 ferroelectric memristor device (NBT-FMD) with temperature sensing. The NBT epitaxial films with strong polarization strength and suitable oxygen vacancy concentration were obtained by temperature adjustment (700 °C). In addition, the function of the spiking-time-dependent plasticity and paired-pulse facilitation is simulated in ferroelectric memristor devices of Pt/NBT/SrRuO3 (SRO)/SrTiO3 (STO). More importantly, we have designed a neuronal circuit to confirm that NBT-FMD can serve as temperature receptors on the human skin, paving the way for bio-inspired application. [ABSTRACT FROM AUTHOR]

Electronic synaptic devices with photoelectric sensing function are becoming increasingly important in the development of neuromorphic computing system. Here, we present a photoelectrical synaptic system based on high-quality epitaxial Ba0.6Sr0.4TiO3 (BST) films in which the resistance ramp characteristic of the device provides the possibility to simulate synaptic behavior. The memristor with the Pt/BST/Nb:SrTiO3 structure exhibits reliable I–V characteristics and adjustable resistance modulation characteristics. The device can faithfully demonstrate synaptic functions, such as potentiation and depression, spike time-dependent plasticity, and paired pulse facilitation, and the recognition accuracy of handwritten digits was as high as 92.2%. Interestingly, the functions of visual perception, visual memory, and color recognition of the human eyes have also been realized based on the device. This work will provide a strong candidate for the neuromorphic computing hardware system of photoelectric synaptic devices. [ABSTRACT FROM AUTHOR]

The ultrafine grain size with a narrow size distribution is a critical issue for the development of L10-FePt thin films as ultrahigh density magnetic recording media. In this study, we succeeded in reducing both the grain size and the ordered domain size of L10-FePt thin films and simultaneously improving the size uniformity by annealing disordered FePt thin films at a high pressure of 1 GPa. This is attributed to the fact that high pressure promotes the nucleation of the L10 ordered domains and inhibits the growth of both the grains and the ordered domains during the L10 ordering transition. [ABSTRACT FROM AUTHOR]

The authors report the fabrication of (Ba0.6Sr0.4)TiO3 (BST) film on Pt/Si(001) substrate without Ti adhesion layer by magnetron sputtering. X-ray diffraction technique is used to characterize the orientation and phase purity of BST/Pt heterostructure. It is found that both BST and Pt films are (111) textured. The (111) BST films are observed to have high tunability of 49.4%; the dielectric constant and dielectric loss of the BST film are about 682 and 0.015, respectively. The leakage current density of BST film agrees well with the space-charge-limited current theory at room temperature and is only 3.90×10-8 A/cm2 at 455 kV/cm. [ABSTRACT FROM AUTHOR]