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For eliminating the limits in the classical models, here we establish a general model for precisely predicting dielectric constant of porous materials. In this model, dielectric constant is independent on pore shapes when the pore size is far smaller than electromagnetic wavelengths; however, it depends on the porosities and correlation between the open pore direction and wave propagation direction. The structure factor β in the effective dielectric formula is 1 and 3 for through-hole and closed-pore materials, respectively. The experimental results are in good agreement with the model, suggesting a favorable tool for predicting dielectric properties of porous materials.

Emerging organic integrated electronics require capability of high speed and the compatibility with high-resolution structuring processes such as photolithography. When downscaling the channel length, the contact resistance is known to limit the performance of the short channel devices. In this report, orthogonal photolithography is used for the patterning of the source/drain electrodes of the organic field-effect transistors (OFETs) as well as the interface dopant insertion layers for further modifications of the contact resistance. Bottom-gate top-contact pentacene OFETs with different thicknesses of the p-dopant 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile under the Au electrodes show a significant decrease in threshold voltage from −2.2 V to −0.8 V and in contact resistance from 55 k Ω cm to 10 k Ω cm by adding a 1 nm thin dopant interlayer. The influence of doping on charge carrier injection is directly visible in the temperature-dependent output characteristics and a charge-transfer acti...

Various materials have been examined to obtain permittivity and permeability values required for detailed investigations on functional materials like microwave-absorbing and high-permittivity dielectrics. We call for caution when samples exhibit negative imaginary permeability, whether containing a resonance peak or not. In the retrieval procedure, the Fabry-Perot resonance (FPR) can produce a negative imaginary permeability, which should be classified as an extrinsic rather than an intrinsic physical attribute. In particular, for high-loss materials, the implicit FPR would bring a plausible negative imaginary permeability. Here we have listed a dielectric dispersion of FPR behavior for BiFeO3 samples.

The self-consistent nonlinear equations, which describe electron cyclotron maser under the condition of anomalous Doppler effect, have been developed. By employing an initially rectilinear electron beam and a guiding static magnetic field, an efficient energy transfer between electrons and microwave can be achieved. The results suggest potential applications in designing a compact and efficient microwave generation/amplification device.

The dielectric properties of multiwalled carbon nanotubes/silica (MWNTs/SiO2) nanocomposite with 10 wt % MWNTs are investigated in the temperature range of 373–873 K at frequencies between 8.2 and 12.4 GHz (X-band). MWNTs/SiO2 exhibits a high dielectric loss and a positive temperature coefficient (PTC) of dielectric effect that complex permittivity increases monotonically with increasing temperature. The PTC effect on the dielectric constant is ascribed to the decreased relaxation time of interface charge polarization, and the PTC effect on the dielectric loss is mainly attributed to the increasing electrical conductivity. The loss tangent strongly supports the dominating contribution of conductance to the dielectric loss.

In this paper, cagelike ZnO∕SiO2 nanocomposites were prepared and their microwave absorption properties were investigated in detail. Dielectric constants and losses of the pure cagelike ZnO nanostructures were measured in a frequency range of 8.2–12.4GHz. The measured results indicate that the cagelike ZnO nanostructures are low-loss material for microwave absorption in X band. However, the cagelike ZnO∕SiO2 nanocomposites exhibit a relatively strong attenuation to microwave in X band. Such strong absorption is related to the unique geometrical morphology of the cagelike ZnO nanostructures in the composites. The microcurrent network can be produced in the cagelike ZnO nanostructures, which contributes to the conductive loss.