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We study the magnetic properties of W/Co40Fe40B20 (CoFeB)/MgO films using the spin-torque ferromagnetic resonance (ST-FMR) technique. This study takes the advantage of the spin Hall magnetoresistance (SMR) for generating an oscillating resistance, which is one of the necessary requirements for obtaining mixing voltage in the ST-FMR technique. We have measured both the as-grown and the annealed samples with different CoFeB layer thicknesses, which include the in-plane and out-of-plane magnetic anisotropies. The spectra for these two types of anisotropies show distinct signatures. By analyzing the ST-FMR spectra, we extract the effective anisotropy field for both types of samples. In addition, we investigate the influence of CoFeB thickness and annealing on the Gilbert damping constant. Our experiments show that by taking advantage of SMR, the ST-FMR measurement acts as an effective tool with high sensitivity for studying the magnetic properties of ultrathin magnetic films.

CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm.

Novel low dimensional quantum phenomena at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces are expected after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found at this (110) system. Here, we report the two dimensional superconductivity with a superconducting transition temperature of ≅ 184 mK at (110) LAO/STO interfaces. The two dimensional characteristics of the superconductivity are consistent with our analysis based on a Berezinskii-Kosterlitz-Thouless transition. The estimated superconducting layer thickness is about 18 nm. This discovery may inspire new studies of LAO/STO interfaces and open additional opportunities for design of novel oxide electronic devices.

An array of Nb strips was fabricated on a Bi2Te3 thin film. Transport measurements show that an upturn of the resistance occurs below the Nb superconducting transition temperature. Corresponding to this resistance upturn, a differential resistance peak around zero bias and a prominent negative magnetoresistance at low magnetic fields are observed. The resistance upturn, differential resistance peak, and negative magnetoresistance can be suppressed by increasing measurement current, temperature, and applied magnetic field. We explain these phenomena in terms of an energy barrier effect induced by the Nb superconducting gap and the suppression of Andreev reflection due to the low transparency at the Nb-Bi2Te3 interface.

Here, we report a facile method to generate a high density of atomic-scale defects in graphene on metal foil and show how these defects affect the electronic structures of graphene layers. Our scanning tunneling microscope measurements, complemented by first-principles calculations, reveal that the atomic-scale defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering.

Molecular beam epitaxy grown MgS on GaAs(111)B substrate was resulted in wurtzite phase, as demonstrated by detailed structural characterizations. Phenomenological arguments were used to account for why wurtzite phase is preferred over zincblende phase or its most stable rocksalt phase. Results of photoresponse and reflectance measurements performed on wurtzite MgS photodiodes suggest a direct bandgap at around 5.1 eV. Their response peaks at 245 nm with quantum efficiency of 9.9% and enjoys rejection of more than three orders at 320 nm and close to five orders at longer wavelengths, proving the photodiodes highly competitive in solar-blind ultraviolet detection.

High crystalline anatase TiO2 and Nb:TiO2 thin films were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. Room temperature ferromagnetism was obtained in Nb:TiO2 but absent in pure TiO2. The Kondo effect and anomalous Hall effect observed in metallic Nb:TiO2 strongly confirmed the existence of exchange interaction between intrinsic local magnetic moments and carriers. High energy resolution x-ray photoelectron spectroscopy studies of the Nb:TiO2 thin film revealed clear signals of Ti3+ and Nb4+ ions, which had one unpaired d electron responsible for the local magnetic moments. This result consisted quite well with the spin polarized first principle calculation.

Mn1.85Co0.3Ni0.85O4 thin films with single cubic spinel phase and compact surface were prepared by chemical solution deposition method on Al2O3 substrates. Temperature dependent ac impedance spectroscopy was employed to analyze the contributions of grain boundary (GB) and grain to the conduction mechanism. The major characteristics (hopping type, resistance versus temperature behavior, and characteristic temperature T0) of the GB and grain were obtained. The hopping type of GB is nearest-neighbor-hopping (NNH), and that of grain might be a transition from variable-range-hopping to NNH. The GB shows dominating resistance while the grain shows stronger temperature dependence.

Here we report the competition of superexchange and double exchange interactions in the molecule [(NH3)4Co(OH)2Co(NH3)4]4+. Magnetic data reveal a S=3 ground state arising from the competition. The canting angle between the magnetic moments of the Co2+ and Co4+ ions is about 92.5°. The double exchange parameter is estimated to be sevenfold of the superexchange parameter. The result presented here opens a way to introducing of ferromagnetic double exchange interaction to the single molecular magnets via the charge disproportionation between valence-variable transition-metal ions.

The electronic density of states of two-dimensional (2D) Au quantum dot superlattice are explored by using cryogenic scanning tunneling microscopy and scanning tunneling spectroscopy. The 2D Au superlattice opens up a gap in its electronic density of states. The single-electron transfer of a single Au quantum dot can be effectively inhibited by this “artificial” forbidden gap. This finding opens a route toward modulating electronic energy band of solid on the basis of 2D metal quantum dot superlattice, which may generate materials with electronic properties for possible future electronic devices.

The electronic local density of states of a single Co3O4 semiconductor nanowire with the diameter of 3 nm is explored using low-temperature scanning tunneling microscopy and spectroscopy. The energy gap between the conduction band and valence band of the nanowire is about 1.7 eV, which is slightly enhanced compared to the bulk value, ∼1.5 eV, due to the quantum confinement effect. Two surface states are observed locating near the Fermi level in the band gap.

Anatase thin films of pure TiO2 and 6% niobium doped TiO2 (Nb:TiO2) were fabricated on LaAlO3(100) by pulsed laser deposition. The electrical properties of Nb:TiO2 films are grain-size dependent, i.e., the larger grain size, the higher conductivity, and mobility. For all TiO2 and for Nb:TiO2 with small mean grain size (d 15 nm), particularly, a blueshift in Nb:TiO2 is governed by the Burstein–Moss effect.