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Radiation and temperature hardness are important for electronic devices operating in harsh environments such as modern medical equipment, outer space, and nuclear energy industries. In this work, we report radiation and temperature-hardened flexible ferroelectric Pb(Zr0.53Ti0.47)O3 epitaxial films that were grown on flexible inorganic mica substrates via van der Waals heteroepitaxy and can be further used for building high-performance electronic devices. We systematically investigated the effect of 60Co-gamma radiation and temperature on the ferroelectric properties of Pb(Zr0.53Ti0.47)O3 films and their flexibility as well. Pb(Zr0.53Ti0.47)O3 films exhibit a radiation and temperature tolerance of up to 20 Mrad and 175 °C, respectively. In particular, the 20 Mrad-irradiated Pb(Zr0.53Ti0.47)O3 film has an excellent retention even after 105 s with extrapolate retention time longer than 10 years and polarization fatigue up to 1010 cycles as well as moderate flexibility and bending stability after bending 105 cycles. Furthermore, we identified that the degradation of macroscopic ferroelectric properties of irradiated Pb(Zr0.53Ti0.47)O3 films originates from the ferroelectric domain pinning effect induced by the ionization effect. Our work demonstrates that flexible ferroelectric Pb(Zr0.53Ti0.47)O3 films are promising for developing novel flexible electronic devices for applications in harsh environments. [ABSTRACT FROM AUTHOR]

BaSn1−xTixO3 (BSTO, x = 0, 0.25, 0.5, 0.75, 1.0) epitaxial films were deposited on LaAlO3(001) substrates by employing a pulsed laser deposition system. Their composition dependent structure and optical properties were systematically investigated using density functional theory (DFT) calculations. High resolution x-ray diffraction characterization showed that the film lattice parameters decrease linearly with the increase in Ti concentrations, following Vegard's law. Optical property measurements revealed that all films have the optical transmittance of more than 70% in the visible and infrared wavelength range. Interestingly, the bandgap nonlinearity of BSTO films was observed, and the film at Ti doped x = 0.25 has the largest bandgap value of 4.04 eV. The calculated electronic structure and the density of states of BSTO films determined by DFT suggested that the strong hybridization between Sn 5s and Ti 3d orbitals caused the initial expansion of the bandgap, whereas upon further increasing the doping content, Ti 3d orbitals dominated the conduction band, leading to the bandgap reduction. [ABSTRACT FROM AUTHOR]