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2. Control of threshold voltage in E-mode and D-mode GaN-on-Si metalinsulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics.

14. Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer.

15. Roles of the first atomic layers in growth of SrTiO[sub 3] films on LaAlO[sub 3] substrates.

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