39 results on '"Lee, K.‐Y."'
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2. Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As
3. Polarized photoluminescence and time-resolved photoluminescence from single CdS nanosheets
4. Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
5. Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-κ gate dielectrics
6. Spatially resolved photoluminescence mapping of single CdS nanosheets
7. Temperature stability of ZnO:Al film properties for poly-Si thin-film devices
8. Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN
9. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
10. Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics
11. Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates
12. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN
13. Long-lasting photoluminescence in freestanding GaN templates
14. Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
15. Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
16. Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate
17. Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
18. Yellow and green luminescence in a freestanding GaN template
19. Transient photoluminescence of defect transitions in freestanding GaN
20. Characterization of free-standing hydride vapor phase epitaxy GaN
21. Deep centers in a free-standing GaN layer
22. High mobility in n-type GaN substrates
23. Optical properties of GaN grown by hydride vapor-phase epitaxy
24. Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
25. Electromigration path in Cu thin-film lines
26. Magnetic and hardness properties of nanostructured Ni–Co films deposited by a nonaqueous electroless method
27. Negative differential conductance in strained Si point contacts and wires
28. Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
29. Picosecond photoresponse of carriers in Si ion‐implanted Si
30. The microstructural stability of Al(Cu) lines during electromigration
31. Observation of ballistic conductance and Aharonov–Bohm oscillations in Si/SiGe heterostructures
32. Conductance in very clean quantum wires and rings
33. Fractional states in few‐electron systems
34. Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters.
35. Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN.
36. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As.
37. Submicron trenching of semiconductor nanostructures.
38. Sidewall damage in n+-GaAs quantum wires from reactive ion etching.
39. Sidewall damage inn+‐GaAs quantum wires from reactive ion etching
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