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Accurate measurements of InP refractive indices in the 1300–1600 nm wavelength range are reported. They are obtained using the grating coupling technique within an asymmetrical slab waveguide where an intrinsic InP guiding layer was grown on a doped InP substrate (N=2×1018 cm−3). Modal indices are obtained with an absolute precision of a few 10−4 from either guided or reflected waves. Bulk refractive indices of intrinsic and N‐doped InP are then deduced from the allowed modes propagating in the layered structure. With sample temperature maintained to within 0.01 K, InP bulk indices are obtained with a typical accuracy of 5×10−4. Furthermore, a (2.02±0.02) 10−4 K−1 refractive index temperature coefficient has been measured for bulk InP at room temperature.

We present a hydrodynamic model to simulate the excitation by optical beating of plasma waves in nanometric field effect transistors. The biasing conditions are whatever possible from Ohmic to saturation conditions. The model provides a direct calculation of the time-dependent voltage response of the transistors, which can be separated into an average and a harmonic component. These quantities are interpreted by generalizing the concepts of plasma transit time and wave increment to the case of nonuniform channels. The possibilities to tune and to optimize the plasma resonance at room temperature by varying the drain voltage are demonstrated.