Search

Low-frequency noise studies in transition metal dichalcogenides have considered the layer-thickness dependence but generally do not separate channel contributions from those of contact/access regions. Here, we study the voltage-dependent 1/f noise and the resistance correlation in MoS2 FETs with an ∼142 atomic layer-thickness channel and three different lengths. The gate-voltage dependence of noise can be separated into a channel contribution, with a comparable Hooge parameter for the three devices and a contact/access region contribution. Separation of these contributions allows the evaluation of the channel noise mechanism and can be used to explain the length-dependence of the transition region between contact- and channel-dominated regimes. [ABSTRACT FROM AUTHOR]

One of the important performance metrics of emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is the magnitude of the low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX2 (X ≡ S, Se) have shown promising transistor characteristics such as ION/IOFF ratio exceeding 106 and low IOFF, making them attractive as channel materials for next generation nanoelectronic devices. However, MoS2 FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders of magnitude smaller values of Hooge parameter in a back-gated MoSe2 FET (10 atomic layers) with nickel S/D contacts and measured at atmospheric pressure and temperature. The channel dominated regime of noise was extracted from the total noise spectrum and is shown to follow a mobility fluctuation model with 1/f dependence. The low noise in MoSe2 FETs is comparable to other 1D nanoelectronic devices such as carbon nanotube FETs (CNT-FETs) and paves the way for use in future applications in precision sensing and communications. [ABSTRACT FROM AUTHOR]