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Your search keyword '"Kuan-Yu Chou"' showing total 2 results
Start Over Author "Kuan-Yu Chou" Journal applied physics letters
2 results on '"Kuan-Yu Chou"'

1. Studying time-dependent contribution of hot-electron versus lattice-induced thermal-expansion response in ultra-thin Au-nanofilms

Author

Chih Chiang Shen, Mu Han Ho, Chi-Kuang Sun, Jinn-Kong Sheu, Peng Jui Wang, and Kuan Yu Chou

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Anharmonicity, Physics::Optics, Photoacoustic imaging in biomedicine, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Thermal expansion, Physics::Fluid Dynamics, Photoexcitation, Lattice (order), 0103 physical sciences, Physics::Chemical Physics, 0210 nano-technology, Hot electron
Abstract

Through the femtosecond-time-resolved study of photoacoustic pulse generation in ultra-thin gold nanofilms, we observed a time delay of 0.5–0.7 ps in the formation of thermal-expansion pulses after photoexcitation. Our observation indicates that lattice anharmonicity dominates over hot electron pressure in the thermal expansion of Au nanofilms under ultrashort-pulsed photoexcitation.

Published
2020

2. Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

Author

Kuan-Yu Chou, Yen Chuang, Nai-Wen Hsu, Yi-Hsin Su, Jiun-Yun Li, Po-Yuan Chiu, and Chung-Tao Chou

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Silicon, business.industry, Transconductance, Transistor, chemistry.chemical_element, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, chemistry, Electrical resistivity and conductivity, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, Fermi gas, business, Saturation (magnetic)
Abstract

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K–300 K. At low temperatures (T 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

Published
2018

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