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With a view to application to electric-device fabrication, the authors investigated a separation-by-implanted-oxygen (SIMOX) three-dimensional (3D) sculpting method [P. Koonath et al., Appl. Phys. Lett. 83, 4909 (2003)] that will integrate in three dimensions electric circuits and photonic circuits on a silicon-on-insulator substrate. The authors analyzed the defects in the first silicon layer for electric circuits and the second silicon layer for optical circuits made by SIMOX 3D sculpting. The authors found that a balance between an acceptable number of defects on the first silicon layer and the formation of a buried optical waveguide is achievable. The defect densities of the first silicon layer and the second silicon layer were 1.8×103∕cm2 and 5.0×107∕cm2, respectively.