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Hexagonal InN layers were grown by molecular beam epitaxy and studied by high resolution electron microscopy and by photoluminescence spectroscopy. Inclusions of a few nanometers in diameter were found, which are among the smallest reported. Image simulation, beam sensitivity, and photoluminescence of the samples corroborate that these inclusions are indeed metallic indium. This letter provides evidence that nanoscopic metallic indium inclusions can be present in InN crystals and have a strong influence on its optical properties. [ABSTRACT FROM AUTHOR]

Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb/InAs heterostructure. This enabled independent quantitative mapping of changes in the In–Ga and As–Sb contents across interfacial regions ∼0.6 nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the In–Ga sublattice. Also, atomic scale roughness within the As–Sb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice. [ABSTRACT FROM AUTHOR]

A letter is presented in response to the article "Three-dimensional atom probe studies of an In(sub x)Ga(sub 1-x)N/GaN multiple quantum well structure: Assessment of possible indium clustering," which appeared in issue no. 90 of 2007.