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Your search keyword '"Kim, S. J."' showing total 20 results
Start Over Author "Kim, S. J." Journal applied physics letters
20 results on '"Kim, S. J."'

18. Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1-xLax)4Ti3O12 films for ferroelectric memories.

Author

Yang, B., Park, N. J., Seo, B. I., Oh, Y. H., Kim, S. J., Hong, S. K., Lee, S. S., and Park, Y. J.

Subjects
FERROELECTRIC crystals, CRYSTALLOGRAPHY, ELECTRON backscattering, BACKSCATTERING, ELECTRON scattering, OPTICAL diffraction
Abstract

We report results of nanoscopic investigation of grain crystallographic orientations and ferroelectric domains by electron backscatter diffraction (EBSD) technique and piezoresponse force microscope (PFM), respectively, in (Bi1-xLax)4Ti3O12 (BLT) films for ferroelectric semiconductor memories. It is demonstrated that the EBSD technique is useful in characterizing nanoscale grain crystallographic orientations of BLT films. Comparison studies of grain orientations by EBSD technique and switching properties of ferroelectric domains by PFM show that c-axis parallel to normal oriented grains with almost linear dielectric properties have platelike morphology. However, a- or b-axis oriented grains with superior ferroelectric properties have ellipsoidal morphology with a size of less than 0.2 μm in long axis. Consequently, the suppression of the platelike structures through process controls is important for the realization of high-density BLT-based memories. [ABSTRACT FROM AUTHOR]

Published
2005
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19. Junction parameter control of Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8+δ] stacked junctions by annealing.

Author

Inomata, K., Kawae, T., Nakajima, K., Kim, S.-J., and Yamashita, T.

Subjects
JOSEPHSON junctions, SUPERCONDUCTORS, CRITICAL currents
Abstract

The control of the critical current density (J[sub c]) and the junction resistance (R[sub N]) along the c axis of intrinsic Josephson junctions (IJJs) on a high-T[sub c] superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J[sub c], R[sub N], and the carrier density in Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8+δ] (Bi-2212) whiskers by changing the carrier density with an annealing process. As a result, the J[sub c] decreased, and the R[sub N] increased systematically when the carrier density decreased. The values of J[sub c] and R[sub N] could be controlled by a change in the carrier density. [ABSTRACT FROM AUTHOR]

Published
2003
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20. Submicron stacked-junction fabrication from Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8+delta] whiskers...

Author

Kim, S.-J., Latyshev, Yu.I., and Yamashita, T.

Subjects
*JOSEPHSON junctions, *ETCHING, *ION bombardment
Abstract

Reports on the fabrication of submicron-sized intrinsic Josephson junctions by the focused-ion-beam etching method. Reduction of the in-plane junction area without degradation in the critical transition temperature; Gap structure and normal state resistance observed; Coulumb staircase structure.

Published
1999
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