230 results on '"Khan, M. Asif"'
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2. Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates
3. Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification
4. Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering
5. Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
6. Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes
7. Simulation of gate lag and current collapse in gallium nitride field-effect transistors
8. 250nmAlGaN light-emitting diodes
9. High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design
10. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
11. Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
12. Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics
13. High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
14. Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter
15. Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN
16. Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire
17. Millimeter wave emission from GaN high electron mobility transistor
18. GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
19. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes
20. Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81, 2755 (2002)]
21. Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm
22. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
23. AlGaN layers grown on GaN using strain-relief interlayers
24. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
25. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
26. Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
27. Near-band-edge photoluminescence of wurtzite-type AlN
28. AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
29. Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
30. Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials
31. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
32. Maximum current in nitride-based heterostructure field-effect transistors
33. Visible–blind photoresponse of GaN-based surface acoustic wave oscillator
34. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
35. Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
36. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
37. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
38. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
39. Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
40. Pulsed atomic layer epitaxy of quaternary AlInGaN layers
41. Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors
42. Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices
43. Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors
44. Band-edge luminescence in quaternary AlInGaN light-emitting diodes
45. High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells
46. Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
47. High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
48. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
49. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors
50. Propagation of guided optical waves in thick GaN layers grown on (0001) sapphire
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