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Attempts to gauge the level of boron clustering by subjecting boron-doped well structures formed in Czochralski silicon to a self-implant and various anneals to form a population of type {311} defects. Use of quantitative transmission electron microscopy; Residual interstitials trapped in the {311} defects as a function of boron concentration and anneal temperature.

Studies the interactions between end-of-range dislocation loops and {311} defects as a function of their proximity. Variation of the depth of the loop layer from the surface; Annealing of the wafers; Decrease in the number of interstitial {311} defects as the projected range damage was brought closer to the loop layer; Increase in the number of rectangular elongated defects.

Investigates the lattice strain and defect formation in oxygen-implanted silicon by high-resolution x-ray diffraction. Formation of vacancy-typed defects with high density; Reduction of the negative strain; Production of low-threading dislocation density; Relaxation of the stringent condition.

Examines the doping superlattices to study transient-enhanced diffusion of boron in regrown silicon. Discussion on the implantation of the wafer; Annealation of samples at 800 degrees Centigrade in an arsenic ambience; Production of implants with a depth for a middle B peak or deepest B peak.

Examines the influence of titanium silicide formation on native silicon point defects. Use of doping superlattices to trace point defect behavior; Enhancement in antimony diffusion; Retardation of boron diffusion over control samples; Mechanisms of vacancy supersaturation and interstitial depletion.

Examines the low energy and low dose B[sup +]-implanted silicon. Use of transmission electron microscopy and secondary ion mass spectroscopy; Integration of B with silicon self-interstitialis from {311} defect dissolution; Effect of extrinsic defects on energy configuration for accommodating excess interstitialis.

Measures the kinetics of solid phase epitaxial regrowth (SPER) during annealing of strained silicon[sub 0.88]germanium[sub 0.12] alloys. Use of time-resolved reflectivity technique; Amorphization of the epilayer by silicon implantation; Dependence of SPER velocity on interface position.

Examines highly stable silicon dioxide films deposited by rapid thermal low-pressure chemical vapor deposition onto indium phosphide. Result of heating the layer structures; Occurrence of a limited interfacial reaction; Effect of higher initial deposition temperature.

Examines the high-quality GaAs/AlGaAs quantum well and modulation-doped heterostructures. Advantage of trimethylmine alane over conventional organometallic precursors; Observation on photoluminescence from quantum well samples; Fabrication of selectively doped heterostructure transistors.

Reports on the growth by organometallic vapor phase epitaxy high-purity InP on Si substrates using a GaAs intermediate layer. Residual electron concentration exhibited by the InP layers; Electrical properties.