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We have designed and characterized an infrared spectrometer, which uses a linear array of quantum grid infrared photodetectors (QGIPs) as its spectral sensing elements. Each QGIP element shares the same detector material but has a different grid geometry. The detector material, which is based on a binary superlattice design, provides an 8–14 μm broadband absorption medium for the spectrometer. The geometry of the grid, which is the light coupling structure under normal incidence, selects individual absorption wavelength for each element. Using a linear array of QGIPs of different geometries, multiple wavelengths can be detected simultaneously, and the array thus forms a spectrometer. Multicolor infrared imaging can then be achieved by integrating such QGIPs in unit cells of a two-dimensional array.

Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the VOC-Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proport...

Quantum dots (QDs) provide photovoltaic conversion of below-bandgap photons due to multistep electron transitions. QDs also increase conversion efficiency of the above-bandgap photons due to extraction of electrons from QDs via Coulomb interaction with hot electrons excited by high-energy photons. Nanoscale potential profile (potential barriers) and nanoscale band engineering (AlGaAs atomically thin barriers) allow for suppression of photoelectron capture to QDs. To study these kinetic effects and to distinguish them from the absorption enhancement due to light scattering on QDs, we investigate long, 3-μm base GaAs devices with various InAs QD media with 20 and 40 QD layers. Quantum efficiency measurements show that, at least at low doping, the multistep processes in QD media are strongly affected by the wetting layer (WL). The QD media with WLs provide substantial conversion of below-bandgap photons and for devices with 40 QD layers the short circuit current reaches 29.2 mA/cm2. The QD media with band-engineered AlGaAs barriers and reduced wetting layers (RWL) enhance conversion of high-energy photons and decrease the relaxation (thermal) losses.

We have observed an intensity‐dependent shift in the exciton absorption features for a system of coupled quantum wells in which a thin barrier separates two wells of unequal widths. We found that for a fixed external bias on the sample, the normal quantum Stark shift of the excitons in the wells was suppressed when light of 1 μW/cm2 intensity was used to measure the absorption. The shift became systematically larger as the light intensity was decreased to as low as 100 pW/cm2. This extremely low‐level nonlinearity may be due to internal fields that arise when free electrons and holes are separated within the coupled‐well system.