1. Deep-level defect characteristics in pentacene organic thin films
- Author
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Lee-Mi Do, Jiyoung Oh, Hyoyoung Lee, Hye Yong Chu, Seong Hyun Kim, Min Ki Ryu, Min Su Jang, Jeong-Ik Lee, Taehyoung Zyung, and Yong Suk Yang
- Subjects
Electron mobility ,Materials science ,Deep-level transient spectroscopy ,Physics and Astronomy (miscellaneous) ,business.industry ,Capacitance ,Pentacene ,Organic semiconductor ,chemistry.chemical_compound ,chemistry ,Thin-film transistor ,Optoelectronics ,Thin film ,business ,MISFET - Abstract
Organic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/V s and the grains larger than 1 μm. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the capacitance properties were measured in the metal/insulator/organic semiconductor structure device by employing the capacitance–voltage and deep-level transient spectroscopy (DLTS) measurements. Based on the DLTS measurements, the concentrations and the energy levels of hole and electron traps in the obtained pentacene films were formed to be approximately 4.2×1015 cm−3 at Ev+0.24 eV, 9.6×1014 cm−3 at Ev+1.08 eV, 6.5×1015 cm−3 at Ev+0.31 eV and 2.6×1014 cm−3 at Ec−0.69 eV.
- Published
- 2002