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Your search keyword '"Jasinski, J."' showing total 24 results
Start Over Author "Jasinski, J." Journal applied physics letters
24 results on '"Jasinski, J."'

1. V-shaped inversion domains in InN grown on c-plane sapphire

Author

Jasinski, J., Liliental-Weber, Z., Lu, H., and Schaff, W.J.

Abstract

Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity AlN films. However, the angle between the side-walls of the V-shaped domain and the c-axis differs in these two cases. In InN, this angle is almost two times bigger than that reported for AlN. The origin of V-shaped inversion domains in InN film is not yet clear.

Published
2004

7. Crystal structure of κ-In2Se3

Author

Jasinski, J., primary, Swider, W., additional, Washburn, J., additional, Liliental-Weber, Z., additional, Chaiken, A., additional, Nauka, K., additional, Gibson, G. A., additional, and Yang, C. C., additional

Published
2002
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20. Studies of excimer laser ablation of solids using a Michelson interferometer.

Author

Walkup, R. E., Jasinski, J. M., and Dreyfus, R. W.

Subjects
*EXCIMER lasers, *LASER ablation, *INTERFEROMETERS
Abstract

A Michelson interferometer has been used as a direct quantitative probe for gas phase plasma formation in the UV excimer laser ablation of solids. Excimer laser fluence thresholds for plasma formation are determined and correlated with optical emission from electronically excited ablation fragments. [ABSTRACT FROM AUTHOR]

Published
1986
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21. Detection of SiH2 in silane and disilane glow discharges by frequency modulation absorption spectroscopy.

Author

Jasinski, J. M., Whittaker, E. A., Bjorklund, G. C., Dreyfus, R. W., Estes, R. D., and Walkup, R. E.

Subjects
*GLOW discharges, *SILANE, *ELECTRIC discharges, *FREQUENCY modulation detectors, *INDUCTIVELY coupled plasma atomic emission spectrometry, *SILYLENES
Abstract

The reactive species SiH2 has been directly observed in dc glow discharges using the technique of frequency modulation absorption spectroscopy. The spatial distribution of SiH2 in the discharge and the relative amounts of SiH2 in silane and disilane discharges have been measured. [ABSTRACT FROM AUTHOR]

Published
1984
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22. Laser detection of diatomic products of plasma sputtering and etching.

Author

Walkup, R., Avouris, Ph., Dreyfus, R. W., Jasinski, J. M., and Selwyn, G. S.

Subjects
LASERS, ION bombardment, DIATOMIC molecules, FLUORESCENCE, PLASMA gases
Abstract

We report on in situ detection of diatomic products of plasma sputtering and reactive ion etching using the technique of laser-induced fluorescence. The diatomic molecules SiN, SiO, and SiF are observed in the gas phase when a silicon surface is subjected to ion bombardment in plasmas containing N2, O2, and CF4, respectively. Information about the production mechanisms is obtained from the measured product concentrations under varying plasma conditions. [ABSTRACT FROM AUTHOR]

Published
1984
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24. Influence of microstructure on electrical properties of diluted GaN[sub x]As[sub 1-x] formed by nitrogen implantation.

Author

Jasinski, J., Yu, K. M., Walukiewicz, W., Washburn, J., and Liliental-Weber, Z.

Subjects
*MICROSTRUCTURE, *GALLIUM arsenide, *ELECTRIC properties
Abstract

Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2001
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