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Your search keyword '"Ikenaga, Eiji"' showing total 20 results
Start Over Author "Ikenaga, Eiji" Journal applied physics letters
20 results on '"Ikenaga, Eiji"'

4. In situ study of an oxidation reaction on a Pt/C electrode by ambient pressure hard X-ray photoelectron spectroscopy

Author

Takagi, Yasumasa, primary, Wang, Heng, additional, Uemura, Yohei, additional, Ikenaga, Eiji, additional, Sekizawa, Oki, additional, Uruga, Tomoya, additional, Ohashi, Haruhiko, additional, Senba, Yasunori, additional, Yumoto, Hirokatsu, additional, Yamazaki, Hiroshi, additional, Goto, Shunji, additional, Tada, Mizuki, additional, Iwasawa, Yasuhiro, additional, and Yokoyama, Toshihiko, additional

Published
2014
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16. Fe3−xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor

Author

Takaobushi, Junichi, primary, Tanaka, Hidekazu, additional, Kawai, Tomoji, additional, Ueda, Shigenori, additional, Kim, Jung-Jin, additional, Kobata, Masaaki, additional, Ikenaga, Eiji, additional, Yabashi, Makina, additional, Kobayashi, Keisuke, additional, Nishino, Yoshinori, additional, Miwa, Daigo, additional, Tamasaku, Kenji, additional, and Ishikawa, Tetsuya, additional

Published
2006
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17. Nondestructive estimation of depletion layer profile in Nb-doped SrTiO3/(La,Ba)MnO3 heterojunction diode structure by hard x-ray photoemission spectroscopy.

Author

Tanaka, Hidekazu, Satoh, Issei, Kanki, Teruo, Ikenaga, Eiji, Kobata, Masaaki, Kim, Jung Jin, Ueda, Shigenori, and Kobayashi, Keisuke

Subjects
NONDESTRUCTIVE testing, SEMICONDUCTOR doping, METALLIC oxides, HETEROJUNCTIONS, X-ray photoelectron spectroscopy, PHOTOELECTRON spectroscopy, BINDING energy
Abstract

We report the hard x-ray (hv=7.94 keV) core level photoemission spectroscopy to determine the depletion layer profile in Nb-doped SrTiO3/(La,Ba)MnO3 n-p+ diode structures. The Sr 2p3/2 spectra were detected penetrating even through (La,Ba)MnO3 over layer with thickness of 20 nm. The spectrum for a 0.01 wt % Nb doped SrTiO3 diode exhibited large shift to lower binding energy, whereas the spectrum for a 0.5 wt % Nb doped SrTiO3 diode exhibited small shift with broader width. The depletion layer lengths were experimentally estimated as 182 nm for 0.01 wt % one and 15 nm for 0.5 wt % one, respectively, in good agreement with semiconductor theory. [ABSTRACT FROM AUTHOR]

Published
2011
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18. Thermoelectric properties and electronic structure of substituted Heusler compounds: NiTi0.3-xScxZr0.35Hf0.35Sn.

Author

Ouardi, Siham, Fecher, Gerhard H., Balke, Benjamin, Schwall, Michael, Kozina, Xeniya, Stryganyuk, Gregory, Felser, Claudia, Ikenaga, Eiji, Yamashita, Yoshiyuki, Ueda, Shigenori, and Kobayashi, Keisuke

Subjects
THERMOELECTRICITY, ELECTRONIC structure, SUBSTITUTION reactions, NICKEL compounds, TITANIUM, ELECTRIC conductivity, THERMAL conductivity, SYNCHROTRON radiation, FERMI surfaces
Abstract

The effect of Ti substitution by Sc on the thermoelectric properties of the Heusler compounds NiTi0.3-xScxZr0.35Hf0.35Sn (where 00.3Zr0.35Hf0.35Sn showed n-type conductivity with a Seebeck coefficient of -288 μV/K at 350 K, while under Sc substitution the system switched to p-type behavior. A maximum Seebeck coefficient of +230 μV/K (350 K) was obtained by 4% Sc substitution, which is the highest value for p-type thermoelectric compounds based on Heusler alloys. The electronic structure was studied by photoelectron spectroscopy excited by hard x-ray synchrotron radiation. Massive in gap states are observed for the parent compound. This proves that the electronic states close to the Fermi energy play a key role on the behavior of the transport properties. Especially, they are responsible for the high, negative Seebeck coefficient of the parent compound. [ABSTRACT FROM AUTHOR]

Published
2010
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19. Subnitride and valence band offset at Si3N4/Si interface formed using nitrogen-hydrogen radicals.

Author

Higuchi, Masaaki, Sugawa, Shigetoshi, Ikenaga, Eiji, Ushio, Jiro, Nohira, Hiroshi, Maruizumi, Takuya, Teramoto, Akinobu, Ohmi, Tadahiro, and Hattori, Takeo

Subjects
NITRIDES, VALENCE (Chemistry), SILICON nitride, RADICALS (Chemistry), PHOTOEMISSION
Abstract

The authors measured soft x-ray-excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels, and valence band for nitride films formed on Si(100), Si(111), and Si(110) using nitrogen-hydrogen radicals with the same probing depth. The Si3N4/Si interfaces formed exhibited an almost abrupt compositional transition. Furthermore, the crystal orientation of Si substrate affects the total areal density of subnitrides but not the valence band offset at the Si3N4/Si interface. [ABSTRACT FROM AUTHOR]

Published
2007
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20. Fe3-xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor.

Author

Takaobushi, Junichi, Tanaka, Hidekazu, Kawai, Tomoji, Ueda, Shigenori, Kim, Jung-Jin, Kobata, Masaaki, Ikenaga, Eiji, Yabashi, Makina, Kobayashi, Keisuke, Nishino, Yoshinori, Miwa, Daigo, Tamasaku, Kenji, and Ishikawa, Tetsuya

Subjects
FERROMAGNETIC materials, EPITAXY, PULSED laser deposition, ELECTRIC properties of thin films, MAGNETIC properties of thin films, PHOTOEMISSION, ELECTRON configuration
Abstract

Epitaxial ferri(ferro)magnetic Fe3-xZnxO4 thin films (x=0–0.9) were prepared using a pulsed-laser deposition technique. The electrical conductivity and magnetic properties of Fe3-xZnxO4 thin film were systematically modulated for the entire range of Zn substitution. Anomalous Hall coefficient measurements revealed the presence of spin-polarized carriers at room temperature. Valence band spectra obtained by hard x-ray photoemission spectroscopy revealed that the density of states near the Fermi level was reduced with an increasing Zn concentration of x. These results indicate that this system will serve as a tunable ferromagnetic semiconductor with a strong electron correlation. [ABSTRACT FROM AUTHOR]

Published
2006
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