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Your search keyword '"Huyet, Guillaume"' showing total 15 results
Start Over Author "Huyet, Guillaume" Journal applied physics letters
15 results on '"Huyet, Guillaume"'

15. Carrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition.

Author

Thoma, Jiri, Liang, Baolai, Lewis, Liam, Hegarty, Stephen P., Huyet, Guillaume, and Huffaker, Diana L.

Subjects
QUANTUM wells, ANTIMONY, SPECTRUM analysis, QUANTUM mechanics, HEAVY metals
Abstract

Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 °C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion. [ABSTRACT FROM AUTHOR]

Published
2013
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