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Your search keyword '"Huang, Y."' showing total 429 results
Start Over Author "Huang, Y." Journal applied physics letters
429 results on '"Huang, Y."'

4. Phase field model of faceted anatase TiO2 dendrites in low pressure chemical vapor deposition.

Author

Huang, Y., Masters, S. L., Krumdieck, S. P., and Bishop, C. M.

Subjects
*CHEMICAL vapor deposition, *VAPOR pressure, *TITANIUM dioxide, *DENDRITIC crystals, *THIN films, *CUBIC equations
Abstract

Anatase TiO2 nanorods with a well-defined ⟨ 110 ⟩ texture have been studied using a model-based characterization technique based on a previous modeling framework. Intricate secondary side facet characteristics of tilt angles of 26.5 ° have been indexed, and a ⟨ 112 ⟩ growth direction of the well-aligned facets is identified. These results have not been accessed experimentally but crucial in understanding the nature of the most abundant facets and their structural properties. We find agreement between our results and indirect experimental measurements. Highly exposed {116} facets are found to be responsible for excellent electrochemical surface properties in nanostructured anatase TiO2 thin films. [ABSTRACT FROM AUTHOR]

Published
2021
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15. Hydrogen-dependent low frequency noise and its physical mechanism of HfO2 resistance change random access memory.

Author

Chen, Y. Q., Liu, X., Liu, Y., Peng, C., Fang, W. X., En, Y. F., and Huang, Y.

Subjects
HYDROGEN, HAFNIUM oxide, RANDOM access memory, QUANTUM tunneling, ELECTRODES
Abstract

The effect of hydrogen on low frequency noise characteristics of HfO2 resistance change random access memories (RRAMs) was investigated in this paper. The experimental results show that HfO2 RRAMs after hydrogen treatment take on the better uniformity of switch characteristics and the conduction enhancement behavior. Furthermore, it was found that the low frequency noise characteristics of the HfO2 RRAMs was significantly impacted by the hydrogen treatment, and at three kinds of typical resistance states, the low frequency noises of the HfO2 RRAMs after hydrogen treatment are larger than those of the fresh HfO2 RRAMs. The mechanism could be attributed to H induced oxygen vacancies, which serve as the additional traps for conduction due to the trap-assisted tunneling process. This will result in more random trap/detrap processes in the conducting filament, which gives rise to the larger low frequency noise in the HfO2 RRAMs. The results of this study may be useful in the design and application of HfO2 RRAMs. [ABSTRACT FROM AUTHOR]

Published
2017
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18. Transport properties in semiconducting NbS2 nanoflakes.

Author

Huang, Y. H., Peng, C. C., Chen, R. S., Huang, Y. S., and Ho, C. H.

Subjects
*NIOBIUM compounds, *DENSITY wave theory, *CHEMICAL vapor deposition, *NANOSTRUCTURES, *PHYSICS research
Abstract

The electronic transport properties in individual niobium disulphide (NbS2) nanoflakes mechanically exfoliated from the bulk crystal with three rhombohedral (3R) structure grown by chemical vapor transport were investigated. It is found that the conductivity values of the single-crystalline nanoflakes are approximately two orders of magnitude lower than that of their bulk counterparts. Temperature-dependent conductivity measurements show that the 3R-NbS2 nanoflakes exhibit semiconducting transport behavior, which is also different from the metallic character in the bulk crystals. In addition, the noncontinuous conductivity variations were observed at the temperature below 180K for both the nanoflakes and the bulks, which is attributed to the probable charge density wave transition. The photoconductivities in the semiconducting nanoflakes were also observed under the excitation at 532nm wavelength. The probable mechanisms resulting in the different transport behaviors between the NbS2 nanostructure and bulk were discussed. [ABSTRACT FROM AUTHOR]

Published
2014
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20. Bi2Sr2CaCu2O8 intrinsic Josephson junction stacks with improved cooling: Coherent emission above 1 THz

Author

Ji, M., primary, Yuan, J., additional, Gross, B., additional, Rudau, F., additional, An, D. Y., additional, Li, M. Y., additional, Zhou, X. J., additional, Huang, Y., additional, Sun, H. C., additional, Zhu, Q., additional, Li, J., additional, Kinev, N., additional, Hatano, T., additional, Koshelets, V. P., additional, Koelle, D., additional, Kleiner, R., additional, Xu, W. W., additional, Jin, B. B., additional, Wang, H. B., additional, and Wu, P. H., additional

Published
2014
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24. Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template

Author

Chong, C. W., primary, Huang, M. J., additional, Han, H. C., additional, Lin, Y. K., additional, Chiu, J. M., additional, Huang, Y. F., additional, Lin, H. J., additional, Pi, T. W., additional, Lin, J. G., additional, Chen, L. C., additional, Chen, K. H., additional, and Chen, Y. F., additional

Published
2013
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27. A ZnO nanowire resistive switch

Author

Karthik, K. R. G., primary, Ramanujam Prabhakar, Rajiv, additional, Hai, L., additional, Batabyal, Sudip K., additional, Huang, Y. Z., additional, and Mhaisalkar, S. G., additional

Published
2013
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28. Modulation of Fermi velocities of Dirac electrons in single layer graphene by moiré superlattice

Author

Zou, Q., primary, Belle, B. D., additional, Zhang, L. Z., additional, Xiao, W. D., additional, Yang, K., additional, Liu, L. W., additional, Wang, G. Q., additional, Fei, X. M., additional, Huang, Y., additional, Ma, R. S., additional, Lu, Y., additional, Tan, P. H., additional, Guo, H. M., additional, Du, S. X., additional, and Gao, H.-J., additional

Published
2013
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32. Terahertz emission and detection both based on high-Tc superconductors: Towards an integrated receiver

Author

An, D. Y., primary, Yuan, J., additional, Kinev, N., additional, Li, M. Y., additional, Huang, Y., additional, Ji, M., additional, Zhang, H., additional, Sun, Z. L., additional, Kang, L., additional, Jin, B. B., additional, Chen, J., additional, Li, J., additional, Gross, B., additional, Ishii, A., additional, Hirata, K., additional, Hatano, T., additional, Koshelets, V. P., additional, Koelle, D., additional, Kleiner, R., additional, Wang, H. B., additional, Xu, W. W., additional, and Wu, P. H., additional

Published
2013
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34. Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures.

Author

Groenendijk, D. J., Manca, N., Mattoni, G., Kootstra, L., Gariglio, S., Huang, Y., van Heumen, E., and Caviglia, A. D.

Subjects
EPITAXY, THERMODYNAMICS, HETEROSTRUCTURES, THIN films, SPIN-orbit interactions, PULSED laser deposition
Abstract

Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices. [ABSTRACT FROM AUTHOR]

Published
2016
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35. First-order ferromagnetic transition in single-crystalline (Mn,Fe)2(P,Si).

Author

Yibole, H., Guillou, F., Huang, Y. K., Blake, G. R., Lefering, A. J. E., van Dijk, N. H., and Brück, E.

Subjects
FERROMAGNETIC materials, MAGNETIC transitions, SINGLE crystals, MAGNETIZATION, CRYSTAL growth, CURIE temperature
Abstract

(Mn,Fe)2(P,Si) single crystals have been grown by flux method. Single crystal X-ray diffraction demonstrates that Mn0.83Fe1.17P0.72Si0.28 crystallizes in a hexagonal Fe2P crystal structure (space group P62m) at both 100 and 280 K, in the ferromagnetic and paramagnetic states, respectively. Magnetization measurements show that the crystals display a first-order ferromagnetic phase transition at their Curie temperature (TC). The preferred magnetization direction is along the c axis. A weak magnetic anisotropy of K 1 = 0.28 × 106 J/m³ and K 2 = 0.22 × 106 J/m³ is found at 5 K. A series of discontinuous magnetization jumps is observed far below TC by increasing the field at constant temperature. These magnetization jumps are irreversible, occur spontaneously at a constant temperature and magnetic field, but can be restored by cycling across the first-order phase transition. [ABSTRACT FROM AUTHOR]

Published
2015
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