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The nanosecond dynamics of near-infrared semiconductor disk lasers is investigated experimentally and theoretically. Lasing and photoluminescence following barrier pumping are analyzed. Their spectral and temporal features such as luminescence overshoot and clamping, delay of lasing onset, and redshift of the emission are explained by a rate equation model taking into account the microscopic gain and luminescence. [ABSTRACT FROM AUTHOR]

We measured time-resolved photoluminescence on as-grown, annealed, as well as annealed and hydrogenated (Ga0.7In0.3)(N0.006As0.994)/GaAs quantum-well structures. The postgrowth treatment changes not only the photoluminescence decay time but also the intensity of photoluminescence directly after excitation. This initial luminescence intensity is determined by a competition between relaxation of electrons into nitrogen related potential fluctuations in the conduction band and their capture by deep traps. In contrast, the decay of the photoluminescence is mainly determined by the competition between radiative and nonradiative recombination, which are both influenced by localization. Annealing decreases localization effects and nonradiative recombination. Hydrogenation also reduces localization effects but increases nonradiative recombination. [ABSTRACT FROM AUTHOR]