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Your search keyword '"Ha K"' showing total 11 results
Start Over Author "Ha K" Journal applied physics letters
11 results on '"Ha K"'

6. Highly stable temperature characteristics of InGaN blue laser diodes

Author

Ryu, H. Y., primary, Ha, K. H., additional, Lee, S. N., additional, Jang, T., additional, Kim, H. K., additional, Chae, J. H., additional, Kim, K. S., additional, Choi, K. K., additional, Son, J. K., additional, Paek, H. S., additional, Sung, Y. J., additional, Sakong, T., additional, Nam, O. H., additional, and Park, Y. J., additional

Published
2006
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10. High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers.

Author

Sung-Nam Lee, Son, J. K., Paek, H. S., Sung, Y. J., Kim, K. S., Kim, H. K., Kim, H., Sakong, T., Park, Y., Ha, K. H., and Nam, O. H.

Subjects
QUANTUM wells, ENERGY-band theory of solids, SEMICONDUCTOR doping, SOLID solutions, SEPARATION (Technology)
Abstract

InGaN optical confinement layers (OCLs) were introduced into blue-violet AlInGaN-based laser diodes (LDs), resulting in the drastic improvements of lasing performance. Comparing with conventional LD structure, the lowest threshold current density of 2.3 kA/cm2 has been achieved by adding 100-nm-thick InGaN OCLs which represented maximum optical confinement factor. Additionally, we observed the high quantum efficiency and the uniform emission intensity distribution of InGaN quantum wells grown on lower InGaN OCL than on typical GaN layer. Upper InGaN OCL can reduce Mg diffusion from p-type layers to InGaN active region by separating the distance between InGaN quantum wells and p-type layers. [ABSTRACT FROM AUTHOR]

Published
2008
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11. High-power GaN-based blue-violet laser diodes with AlGaN/GaN multiquantum barriers.

Author

Sung-Nam Lee, Cho, S. Y., Ryu, H. Y., Son, J. K., Paek, H. S., Sakong, T., Jang, T., Choi, K. K., Ha, K. H., Yang, M. H., Nam, O. H., Park, Y., and Yoon, E.

Subjects
QUANTUM wells, LASERS, DIODES, SEMICONDUCTORS, PHOTONICS
Abstract

AlGaN/GaN multiquantum barriers (MQBs) were introduced into violet AlInGaN laser diodes with an InGaN multiquantum-well structure, resulting in drastic improvements in lasing performance. Comparing with conventional AlGaN single electron blocking layer (EBL), lower threshold current of 32 mA and higher slope efficiency of 1.12 W/A at room temperature has been achieved by using the AlGaN/GaN multiquantum barrier. This improvement implies that p-type AlGaN/GaN MQBs are more effective in suppressing the overflow of electrons than p-type AlGaN single EBL. Effective barrier heights of the MQBs should be higher than the single EBL due to the quantum effect of MQBs and the enhancement of p-type doping efficiency. Additionally, the effect of strain on InGaN multiquantum wells from the single EBL can be reduced by using the AlGaN/GaN MQBs structure. [ABSTRACT FROM AUTHOR]

Published
2006
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