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Your search keyword '"Guizzetti, G."' showing total 9 results
Start Over Author "Guizzetti, G." Journal applied physics letters
9 results on '"Guizzetti, G."'

8. Wide-band transmittance of one-dimensional photonic crystals carved in Si3N4/SiO2 channel waveguides.

Author

Gerace, D., Galli, M., Bajoni, D., Guizzetti, G., Andreani, L. C., Riboli, F., Melchiorri, M., Daldosso, N., Pavesi, L., Pucker, G., Cabrini, S., Businaro, L., and di Fabrizio, E.

Subjects
WAVEGUIDES, ELECTRICAL conductors, ELECTRIC waves, ELECTROMAGNETIC waves, GYRATORS, MICROWAVE transmission lines, SPECTRUM analysis, ION bombardment
Abstract

Experimental and theoretical investigations of photonic crystal (PhC) structures in silicon nitride/silicon dioxide (Si3N4/SiO2) vertical waveguiding geometry are reported. One-dimensional patterns, either periodic or with cavity layers, are carved onto the channel waveguides by using focused ion beam lithography. Broadband transmittance spectroscopy in the visible and near-infrared frequency ranges is employed to show photonic band gap behavior up to the fourth order. For structures with a cavity layer, resonant peaks appear in transmittance spectra within the photonic gaps, in agreement with theory. The results show the interest of Si3N4/SiO2-based PhC waveguides for photonics applications from the infrared up to the visible range. [ABSTRACT FROM AUTHOR]

Published
2005
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9. Photoreflectance evidence of the N-induced increase of the exciton binding energy in an In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y] alloy.

Author

Geddo, M., Guizzetti, G., Capizzi, M., Polimeni, A., Gollub, D., and Forchel, A.

Subjects
*QUANTUM wells, *POTENTIAL theory (Physics), *EXCITON theory, *BINDING energy
Abstract

The binding energy of the heavy-hole ground-state exciton in In[SUB0.25]Ga[SUB0.75]As[SUB1-y]N[SUBy]/GaAs single quantum wells (y = 0, 0.011) was experimentally derived by photoreflectance measurements. We measured a binding energy of 6.6 and 8.5 meV for the N-free and the N-containing sample, respectively. The observed increase of the exciton binding energy can be accounted for by an increase of the exciton reduced mass of about 30% upon N introduction into the In[SUBx]Ga[SUB1-x]As lattice, consistently with recent experimental results and in agreement with earlier theoretical predictions. [ABSTRACT FROM AUTHOR]

Published
2003
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