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Start Over Author "Grandidier B" Journal applied physics letters
23 results on '"Grandidier B"'

1. Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

Author

Peric, Nemanja, primary, Durand, Corentin, additional, Berthe, Maxime, additional, Lu, Yan, additional, N'Konou, Kekeli, additional, Coratger, Roland, additional, Lefebvre, Isabelle, additional, Ebert, Philipp, additional, Biadala, Louis, additional, Desplanque, Ludovic, additional, Wallart, Xavier, additional, and Grandidier, B., additional

Published
2022
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2. Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy.

Author

Peric, Nemanja, Durand, Corentin, Berthe, Maxime, Lu, Yan, N'Konou, Kekeli, Coratger, Roland, Lefebvre, Isabelle, Ebert, Philipp, Biadala, Louis, Desplanque, Ludovic, Wallart, Xavier, and Grandidier, B.

Subjects
SCANNING tunneling microscopy, SCANNING probe microscopy, HETEROJUNCTIONS, TUNNELING spectroscopy, NANOWIRES, CONDUCTION bands, VALENCE bands, HETEROSTRUCTURES
Abstract

The knowledge of the band alignment in semiconductor heterostructures is crucial, as it governs carrier confinement with many impacts on the performances of devices. By controlling the direction of the current flow in in-plane In0.53Ga0.47As/InP heterostructure nanowires, either horizontally along the nanowires or vertically into the InP substrate with low temperature multiple-probe tunneling spectroscopy, a direct measurement of the band offsets at the buried In0.53Ga0.47As/InP heterointerface is performed. Despite the unavoidable processing steps involved in selective area epitaxy, conduction and valence band offsets of 0.21 ± 0.01 and 0.40 ± 0.01 eV are, respectively, found, indicating the formation of an interface with a quality comparable to two-dimensional In0.53Ga0.47As/InP heterostructures. [ABSTRACT FROM AUTHOR]

Published
2022
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3. Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

Author

Xu, T., primary, Wei, M. J., additional, Capiod, P., additional, Díaz Álvarez, A., additional, Han, X. L., additional, Troadec, D., additional, Nys, J. P., additional, Berthe, M., additional, Lefebvre, I., additional, Patriarche, G., additional, Plissard, S. R., additional, Caroff, P., additional, Ebert, Ph., additional, and Grandidier, B., additional

Published
2015
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8. Intrinsic bandgap of cleaved ZnO(112¯) surfaces

Author

Sabitova, A., primary, Ebert, Ph., additional, Lenz, A., additional, Schaafhausen, S., additional, Ivanova, L., additional, Dähne, M., additional, Hoffmann, A., additional, Dunin-Borkowski, R. E., additional, Förster, A., additional, Grandidier, B., additional, and Eisele, H., additional

Published
2013
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11. Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires.

Author

Xu, T., Wei, M. J., Capiod, P., Àlvarez, A. Díaz, Han, X. L., Troadec, D., Nys, J. P., Berthe, M., Lefebvre, I., Patriarche, G., Plissard, S. R., Caroff, P., Ebert, Ph., and Grandidier, B.

Subjects
GALLIUM arsenide, ENERGY bands, CRYSTAL growth, STRUCTURAL shells, NANOWIRES, TRANSMISSION electron microscopy
Abstract

The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs81Sb19/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs81Sb19 intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs81Sb19 core and the GaAs shell and identifies it as a type I band alignment. [ABSTRACT FROM AUTHOR]

Published
2015
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21. Compensation mechanisms in low-temperature-grown Ga[sub 1-x]Mn[sub x]As investigated by scanning tunneling spectroscopy.

Author

Mahieu, G., Condette, P., Grandidier, B., Nys, J. P., Allan, G., Stiévenard, D., Ebert, Ph., Shimizu, H., and Tanaka, M.

Subjects
LOW temperature engineering, SCANNING tunneling microscopy, TUNNELING spectroscopy, MANGANESE
Abstract

Ga[sub 1-x]Mn[sub x]As layers with Mn composition of up to 6.2% are investigated by cross-sectional scanning tunneling microscopy and spectroscopy. We identify in the tunneling spectra contributions from Mn[sup -, sub Ga] acceptor states, compensating As[sup 2+, sub Ga] donor states, and additional compensating donor states, which we suggest to be Mn[sup 2+, sub i] interstitials. On basis of the observed Fermi level shift and a charge carrier compensation analysis, we deduce the concentration of Mn[sup 2+, sub i] interstitials. Furthermore, scanning tunneling microscopy images suggest an inhomogeneous distribution of Mn dopant atoms. [ABSTRACT FROM AUTHOR]

Published
2003
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22. Hidden surface states at non-polar GaN [formula] facets: Intrinsic pinning of nanowires.

Author

Lymperakis, L., Weidlich, P. H., Eisele, H., Schnedler, M., Nys, J.-P., Grandidier, B., Stiévenard, D., Dunin-Borkowski, R. E., Neugebauer, J., and Ebert, Ph.

Subjects
NANOWIRES, ELECTRONIC structure, ELECTRON transport, ENERGY bands, SCANNING tunneling microscopy, ELECTRIC conductivity
Abstract

We investigate the electronic structure of the [formula] prototype surface for GaN nanowire sidewalls. We find a paradoxical situation that a surface state at all k points in the bandgap cannot be probed by conventional scanning tunneling microscopy, due to a dispersion characterized by a steep minimum with low density of states (DOS) and an extremely flat maximum with high DOS. Based on an analysis of the decay behavior into the vacuum, we identify experimentally the surface state minimum 0.6 ± 0.2 eV below the bulk conduction band in the gap. Hence, GaN nanowires with clean [formula] sidewall facets are intrinsically pinned. [ABSTRACT FROM AUTHOR]

Published
2013
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23. Influence of barrier height on scanning tunneling spectroscopy experimental and theoretical aspects.

Author

Stie´venard, D., Grandidier, B., Nys, J. P., de la Broise, X., Delerue, C., and Lannoo, M.

Subjects
*TUNNELING spectroscopy, *GALLIUM arsenide, *SURFACE chemistry
Abstract

Scanning tunneling spectroscopy allows the determination of the density of states of the involved electrodes as well as the associated barrier height. We have measured the barrier height between tungsten tip and the GaAs (110) surface with a scanning tunneling microscope (STM) in ultrahigh vacuum. When the tunneling junction exhibited a low barrier height, we observed and explained an apparent widening of the GaAs gap which can mislead the real doping concentration of the sample. A theoretical model based on the self-consistent Keldysh–Green functions formalism is used to calculate the STM current. It shows a possible lowering of the barrier height according to the adsorption of As or Ga atoms on the apex of the tungsten tip. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1998
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