Search

Your search keyword '"González T"' showing total 18 results
Start Over Author "González T" Journal applied physics letters
18 results on '"González T"'

2. Low temperature memory effects in AlGaN/GaN nanochannels.

Author

Sánchez-Martín, H., Pérez-Martín, E., Paz-Martínez, G., Mateos, J., González, T., and Íñiguez-de-la-Torre, I.

Subjects
TEMPERATURE effect, LOW temperatures, CURRENT-voltage curves, SURFACE states, ELECTRON traps, TRENCHES
Abstract

Two-terminal devices based on an AlGaN/GaN nanochannel exhibit a significant hysteresis in their current–voltage curve due to their large surface-to-volume ratio. Surface effects at the sidewalls of the trenches defining the nanochannel are the key for such behavior. By applying large positive/negative voltages, it is possible to trap/de-trap electrons in/from the surface states, thus modulating the conductance of the channel. In this work, the characteristic times of the involved slow processes (of the order of tens or hundreds of s) are studied from 70 up to 200 K, and the possible memory applications due to the charge retention are explored. [ABSTRACT FROM AUTHOR]

Published
2023
Full Text
View/download PDF

5. Bohm trajectories for the Monte Carlo simulation of quantum-based devices

Author

Oriols Pladevall, Xavier, Suñé, Jordi, García García, Juan José, Martín, Ferran, González, T., Mateos, J., Pardo, D., and American Physical Society

Subjects
Physics, Matter waves, Physics and Astronomy (miscellaneous), Quantum Monte Carlo, Monte Carlo method, Quantum annealing, Monte Carlo methods, Quantum effects, Electronic transport, Quantum transport, Quantum phase estimation algorithm, Quantum algorithm, Statistical physics, Matter wave, Physics demonstrations, Resonant tunneling diodes, Quantum, Quantum tunnelling
Abstract

A generalization of the classical ensemble Monte Carlo (MC) device simulation technique is proposed to simultaneously deal with quantum-mechanical phase-coherence effects and scattering interactions in quantum-based devices. The proposed method restricts the quantum treatment of transport to the regions of the device where the potential profile significantly changes in distances of the order of the de Broglie wavelength of the carriers (the quantum window). Bohm trajectories associated to time-dependent Gaussian wave packets are used to simulate the electron transport in the quantum window. Outside this window, the classical ensemble MC simulation technique is used. Classical and quantum trajectories are smoothly matched at the boundaries of the quantum window according to a criterium of total-energy conservation. A self-consistent one-dimensional simulator for resonant tunneling diodes has been developed to demonstrate the feasibility of our proposal.

Published
1998

7. On the effect of δ-doping in self-switching diodes

Author

Westlund, A., primary, Iñiguez-de-la-Torre, I., additional, Nilsson, P.-Å., additional, González, T., additional, Mateos, J., additional, Sangaré, P., additional, Ducournau, G., additional, Gaquière, C., additional, Desplanque, L., additional, Wallart, X., additional, and Grahn, J., additional

Published
2014
Full Text
View/download PDF

15. On the effect of &#948-doping in self-switching diodes.

Author

Westlund, A., Iñiguez-de-la-Torre, I., Nilsson, P-Å, González, T., Mateos, J., Sangaré, P., Ducournau, G., Gaquière, C., Desplanque, L., Wallart, X., and Grahn, J.

Subjects
DIODES, SWITCHING diodes, RADIO frequency, MONTE Carlo method, PHYSICS research
Abstract

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design parameters. Monte Carlo simulations confirmed the modeled effect of varying carrier concentration and channel width. SSDs were fabricated in InAs heterostructures with different δ-doping levels. Radio frequency (RF) characterization at 50 GHz reproduced the modeled trends. By reducing the carrier concentration in InAs SSDs with 40 nm wide channels from 2.7 x 1012 cm-2 to 1.5 x 1012 cm-2 (44%), the noise equivalent power (NEP) improved from 130 pW/Hz½ to 87 pW/Hz½ (-33%). [ABSTRACT FROM AUTHOR]

Published
2014
Full Text
View/download PDF

18. Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type In0.53Ga0.47As.

Author

Millithaler, J.-F., Reggiani, L., Pousset, J., Varani, L., Palermo, C., Knap, W., Mateos, J., González, T., Perez, S., and Pardo, D.

Subjects
PLASMA frequencies, ELECTRIC fields, ELECTROMAGNETIC fields, PHYSICS, PHYSICAL sciences
Abstract

By numerical simulations we investigate the dispersion of the plasma frequency in a n-type In0.53Ga0.47As layer of thickness W and submicron length at T=300 K. For W=100 nm and carrier concentrations of 1016–1018 cm-3 the results are in good agreement with the standard three-dimensional (3D) expression of the plasma frequency. For W≤10 nm the results exhibit a plasma frequency that depends on L, thus implying that the oscillation mode is dispersive. The corresponding frequency values are in good agreement with the two-dimensional (2D) expression of the plasma frequency obtained for a ballistic regime within the in-plane approximation for the electric field. A region of cross over between the 2D and 3D behaviors of the plasma frequency is evidenced for W>10 nm [ABSTRACT FROM AUTHOR]

Published
2008
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results