145 results on '"Foxon, C. T."'
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2. Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As
3. Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films
4. Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy
5. Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)
6. Electronic band structure of highly mismatched GaN1-xSbx alloys in a broad composition range.
7. Thermal stability of amorphous GaN1−xAsx alloys
8. Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
9. GaN1−xBix: Extremely mismatched semiconductor alloys
10. Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
11. Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes
12. Low gap amorphous GaN1−xAsx alloys grown on glass substrate
13. Atomic scale characterization of Mn doped InAs/GaAs quantum dots
14. A low field technique for measuring magnetic and magnetoresistance anisotropy coefficients applied to (Ga,Mn)As
15. Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures
16. Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control
17. Achieving high Curie temperature in (Ga,Mn)As
18. Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy
19. Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
20. Measuring the hole chemical potential in ferromagnetic Ga1−xMnxAs∕GaAs heterostructures by photoexcited resonant tunneling
21. Control of coercivities in (Ga,Mn)As thin films by small concentrations of MnAs nanoclusters
22. Structural characterization of zincblende Ga1−xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates
23. Generation of terahertz monochromatic acoustic phonon pulses by femtosecond optical excitation of a gallium nitride/aluminium nitride superlattice
24. p-type conductivity in cubic (Ga,Mn)N thin films
25. Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs
26. Surface effects in Mn L3,2 x-ray absorption spectra from (Ga,Mn)As
27. Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]
28. Isoelectronic doping of AlGaN alloys with As and estimates of AlGaN/GaN band offsets
29. Investigation of radiative recombination from Mn-related states in Ga1−xMnxAs
30. Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors
31. High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing
32. Hall effect and hole densities in Ga1−xMnxAs
33. The nature of arsenic incorporation in GaN
34. Carrier relaxation dynamics for As defects in GaN
35. Absorption of nonequilibrium acoustic phonons by low-mobility electrons in GaN
36. Imaging phonon drag in gallium nitride
37. Strong blue emission from As doped GaN grown by molecular beam epitaxy
38. Intersubband transitions in GaAs coupled-quantum-wells for use as a tunable detector at THz frequencies
39. High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN
40. Domain boundaries in epitaxial wurtzite GaN
41. Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodes
42. Lattice parameters of gallium nitride
43. Morphology of luminescent GaN films grown by molecular beam epitaxy
44. Femtosecond optical absorption measurements of electron‐phonon scattering in GaAs quantum wells
45. Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
46. Carrier escape mechanisms from GaAs/AlxGa1−xAs multiple quantum wells in an electric field
47. Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates
48. Short‐circuit current and energy efficiency enhancement in a low‐dimensional structure photovoltaic device
49. Low‐power, all‐optical nonlinear absorption in asymmetric double quantum wells
50. Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures
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