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Your search keyword '"Fang, Bin"' showing total 18 results
Start Over Author "Fang, Bin" Journal applied physics letters
18 results on '"Fang, Bin"'

2. Magnetic field-free stochastic computing based on the voltage-controlled magnetic tunnel junction.

Author

Luo, Yanxiang, Wu, Yuxuan, Zeng, Kexin, Zhang, Like, Liu, Shuhui, Luo, Renjuan, Luo, Yawen, Zhang, Xuan, Fang, Bin, Zhou, Yan, and Zeng, Zhongming

Subjects
MAGNETIC tunnelling, VOLTAGE control, SPINTRONICS
Abstract

The stochastic computing (SC) has been proven to be an energy-efficient way to perform neural network. In this study, we propose a field-free voltage-controlled spintronics SC system based on the magnetic tunnel junction (MTJ). We observe a stochastic switching behavior of the MTJ and that it could be controlled by the voltage applied on the device. The voltage-controlled stochastic switching behavior is used to encode numbers ranging from 0 to 1 into a series of random bit-streams in the SC system. Furthermore, the handwritten recognition task is performed on the MTJ-based SC system, achieving a 95% maximum accuracy, which is comparable with the floating-point based neural network. Our work provides inspiration for the energy-efficient neural network systems. [ABSTRACT FROM AUTHOR]

Published
2024
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4. Neural-like population coding based on spin-torque diode

Author

Tu, Huayao, primary, Zhang, Like, additional, Luo, Yanxiang, additional, Lv, Wenxing, additional, Lei, Ting, additional, Cai, Jialin, additional, Fang, Bin, additional, Finocchio, Giovanni, additional, Bian, Lifeng, additional, Li, Shuping, additional, Zhang, Baoshun, additional, and Zeng, Zhongming, additional

Published
2023
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6. Effective tuning of spin mixing conductance at the Py/Cu–Nd interface

Author

Chen, Qian, primary, Cao, Lulu, additional, Li, Jinji, additional, Fu, Qiang, additional, Zhu, Yonghui, additional, Guo, Qingjie, additional, Liu, Ruobai, additional, Li, Tian, additional, Zhang, Wen, additional, Du, Jun, additional, Zheng, Jianguo, additional, Huang, Zhaocong, additional, Wong, Ping Kwan Johnny, additional, Fang, Bin, additional, Zeng, Zhongming, additional, and Zhai, Ya, additional

Published
2022
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16. Ferromagnetic resonance manipulation by electric fields in Ni81Fe19/Bi3.15Nd0.85Ti2.99Mn0.01O12 multiferroic heterostructures.

Author

Xiong, Rongxin, Zhang, Wanli, Fang, Bin, Li, Gang, Li, Zheng, Zeng, Zhongming, and Tang, Minghua

Subjects
FERROMAGNETIC resonance, ELECTRIC fields, MAGNETIC anisotropy, TORQUE, FERROMAGNETIC materials
Abstract

We investigated electric-field modulation of ferromagnetic resonance (FMR) in Ni81Fe19 (NiFe)/Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) heterostructures at room temperature. BNTM thin films were deposited on a Pt (111)/Ti/SiO2/Si (100) substrate by the sol-gel method. The strain effect is produced by the electric field applied to the BNTM layer, which results in the FMR spectrum shift by tuning of the magnetic anisotropy of the NiFe microstrip devices. A strain-induced magnetic anisotropy change of 332 fJ/Vm is obtained by analyzing the experimental FMR spectra. We discussed an influence on spin orbit torques by applying an electric field to a ferroelectric (FE) layer via coupling to polarization with FMR experiments evidencing. The torque ratios τa/τb increased at first and then declined from the positive to negative electric field. As the value of the applied electric field changes from 129 kV/cm to 0 kV/cm, the variation of the torque ratios τa/τb (the field-like torque τa and damping-like torque τb) is about 0.07. Our results reported in this work demonstrate a route to realize a large magneto-electric coupling effect at room temperature and provide some insights into possible applications of the ferromagnetic/FE device. [ABSTRACT FROM AUTHOR]

Published
2018
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17. Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode.

Author

Zhang, Like, Fang, Bin, Cai, Jialin, Carpentieri, Mario, Puliafito, Vito, Garescì, Francesca, Amiri, Pedram Khalili, Finocchio, Giovanni, and Zeng, Zhongming

Subjects
*MICROWAVE detectors, *DETECTORS, *SPIN transfer torque, *TORQUE control, *ELECTRICAL engineering
Abstract

Microwave detection has a huge number of applications in physics and engineering. It has already been shown that biased spin torque diodes have performance overcoming the CMOS counterpart in terms of sensitivity. In this regard, the spin torque diodes are promising candidates for the next generation of microwave detectors. Here, we show that the optimization of the rectification process based on the injection locking mechanism gives an ultrahigh sensitivity exceeding 200 kV/W with an output resistance below 1 kΩ while maintaining the advantages over other mechanisms such as vortex expulsion or non-linear resonance, to work without a bias magnetic field. [ABSTRACT FROM AUTHOR]

Published
2018
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