149 results on '"Egawa, T"'
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2. Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy.
3. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
4. Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition
5. Compositional instability in InAlN/GaN lattice-matched epitaxy
6. Pd/InAlN Schottky diode with low reverse current by sulfide treatment
7. Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers
8. Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
9. Low-temperature electroluminescence quenching of AlGaN deep ultraviolet light-emitting diodes
10. Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes
11. Improved performance of InAlN-based Schottky solar-blind photodiodes
12. Suppression of the subband parasitic peak by 1nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes
13. AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition
14. Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes
15. Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors
16. Sheet carrier density enhancement by Si3N4 passivation on nonpolar a-plane (112¯0) sapphire grown AlGaN∕GaN heterostructures
17. Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes
18. High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template
19. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate.
20. Highly efficient GaN-based light emitting diodes with micropits
21. Reduction of threading dislocations in AlGaN layers grown on AlN∕sapphire templates using high-temperature GaN interlayer
22. Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate
23. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon
24. Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN
25. Current collapse-free i-GaN∕AlGaN∕GaN high-electron-mobility transistors with and without surface passivation
26. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
27. Formation chemistry of high-density nanocraters on the surface of sapphire substrates with anin situetching and growth mechanism of device-quality GaN films on the etched substrates
28. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
29. Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells
30. Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
31. Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
32. Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
33. Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition
34. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
35. Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
36. Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition
37. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
38. Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
39. The infrared optical functions of AlxGa1−xN determined by reflectance spectroscopy
40. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
41. Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition
42. Optical properties of AlxGa1−xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
43. Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode
44. Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
45. Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
46. AlGaAs/GaAs light‐emitting diode on a Si substrate with a self‐formed GaAs islands active region grown by droplet epitaxy
47. 2000 h stable operation in 0.87 μm light-emitting diode using stress-free InGaP/GaAs/Si
48. Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates
49. Optical and electrical degradations of GaAs-based laser diodes grown on Si substrates
50. Surface microroughness observed by scanning tunneling microscope and improved device characteristics of GaAs/Si grown with AlGaAs/AlGaP intermediate layers
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