1. Crystallization study of 'melt quenched' amorphous GeTe by transmission electron microscopy for phase change memory applications
- Author
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B. André, Sandrine Lhostis, L. Perniola, Sylvain Maitrejean, F. Mompiou, C. Borowiak, N. Bicais-Lepinay, Daniel Bensahel, Caroline Bonafos, Andrea Fantini, C. Sandhya, A. Roule, J.C. Bastien, F. Lorut, Germain Servanton, Veronique Sousa, Bérangère Hyot, Alain Toffoli, A. Bastard, and E. Gourvest
- Subjects
Void (astronomy) ,Materials science ,Physics and Astronomy (miscellaneous) ,Annealing (metallurgy) ,law.invention ,Amorphous solid ,Phase-change memory ,Crystallography ,law ,Transmission electron microscopy ,Chemical physics ,Crystallite ,Electron microscope ,Crystallization - Abstract
In situ transmission electron microscopy (TEM) observations were performed for a better understanding of the “melt quenched” GeTe crystallization mechanism. The evolution of the crystallite morphology observed during annealing shows a growth-dominated crystallization behavior. Scanning transmission electron microscopy—electron dispersive x-ray spectroscopy and high resolution electron microscopy experiments were also performed on cycled GeTe devices, showing that void formation is responsible for the cell failure after 107 cycles.
- Published
- 2011
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