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Start Over Author "Douhard, B." Journal applied physics letters
4 results on '"Douhard, B."'

2. Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si.

Author

Gupta, S., Shimura, Y., Richard, O., Douhard, B., Simoen, E., Bender, H., Nakatsuka, O., Zaima, S., Loo, R., and Heyns, M.

Subjects
MOLECULAR beam epitaxy, TRANSMISSION electron microscopes, EPITAXY, CRYSTAL growth, COST effectiveness
Abstract

Defects in Ge0.947Sn0.053 layers grown using molecular beam epitaxy on (001) Si substrates with 4.9% mismatch are investigated using optical, scanning, and transmission electron and atomic force microscopies. It is shown that the strain relaxation occurs via the introduction of 90° misfit dislocations of short length, at the Ge0.947Sn0.053/Si interface. An irregular morphology in the form of mounds is observed on the surface of epitaxial Ge1−xSnx (0.031 ≤ x ≤ 0.093) and is found to be associated with carbon impurities at the hetero-interface. A low-cost and fast defect selective wet etching technique is described to determine the etch pit density in epitaxial Ge1−xSnx with a low Sn content (≤5.3%). On the basis of etch pit morphology, different defects, e.g., dislocations, stacking faults, and crystal originated particles, are distinguished. [ABSTRACT FROM AUTHOR]

Published
2018
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4. Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation

Author

Martens, Koen, primary, Rooyackers, R., additional, Firrincieli, A., additional, Vincent, B., additional, Loo, R., additional, De Jaeger, B., additional, Meuris, M., additional, Favia, P., additional, Bender, H., additional, Douhard, B., additional, Vandervorst, W., additional, Simoen, E., additional, Jurczak, M., additional, Wouters, D. J., additional, and Kittl, J. A., additional

Published
2011
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