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Your search keyword '"Doria, Rodrigo T."' showing total 3 results
Start Over Author "Doria, Rodrigo T." Journal applied physics letters
3 results on '"Doria, Rodrigo T."'

2. Reduced electric field in junctionless transistors

Author

Colinge, Jean-Pierre, primary, Lee, Chi-Woo, additional, Ferain, Isabelle, additional, Akhavan, Nima Dehdashti, additional, Yan, Ran, additional, Razavi, Pedram, additional, Yu, Ran, additional, Nazarov, Alexei N., additional, and Doria, Rodrigo T., additional

Published
2010
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3. Low subthreshold slope in junctionless multigate transistors.

Author

Chi-Woo Lee, Nazarov, Alexei N., Ferain, Isabelle, Akhavan, Nima Dehdashti, Ran Yan, Razavi, Pedram, Ran Yu, Doria, Rodrigo T., and Colinge, Jean-Pierre

Subjects
TRANSISTORS, SEMICONDUCTORS, ELECTRONICS, IONIZATION (Atomic physics), AUGER effect
Abstract

The improvement of subthreshold slope due to impact ionization is compared between “standard” inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. [ABSTRACT FROM AUTHOR]

Published
2010
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