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Start Over Author "Dmitriev, D." Journal applied physics letters
6 results on '"Dmitriev, D."'

3. Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

Author

Tereshchenko, O. E., primary, Golyashov, V. A., additional, Eremeev, S. V., additional, Maurin, I., additional, Bakulin, A. V., additional, Kulkova, S. E., additional, Aksenov, M. S., additional, Preobrazhenskii, V. V., additional, Putyato, M. A., additional, Semyagin, B. R., additional, Dmitriev, D. V., additional, Toropov, A. I., additional, Gutakovskii, A. K., additional, Khandarkhaeva, S. E., additional, Prosvirin, I. P., additional, Kalinkin, A. V., additional, Bukhtiyarov, V. I., additional, and Latyshev, A. V., additional

Published
2015
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6. Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications.

Author

Tereshchenko, O. E., Golyashov, V. A., Eremeev, S. V., Maurin, I., Bakulin, A. V., Kulkova, S. E., Aksenov, M. S., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Dmitriev, D. V., Toropov, A. I., Gutakovskii, A. K., Khandarkhaeva, S. E., Prosvirin, I. P., Kalinkin, A. V., Bukhtiyarov, V. I., and Latyshev, A. V.

Subjects
METAL oxide semiconductor capacitors, GALLIUM arsenide, CRYSTAL growth, ELECTRIC properties of hafnium oxide, POLARIMETRY, MAGNETIC properties of metals, FERROMAGNETIC materials, SILICON
Abstract

In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer on GaAs(001) grown by molecular beam epitaxy. Ultrathin HfO2 high-k gate dielectric films (3-15 nm) have been grown on Si/GaAs(001) structures through evaporation of a Hf/HfO2 target in NO2 gas. The lowest interface states density Dit at Au/HfO2/Si/GaAs(001) MOS-structures were obtained in the range of (6-13)×10¹1 eV-1 cm-2 after annealing in the 400-500 °C temperature range as a result of HfO2 crystallization and the Si layer preservation in non-oxidized state on GaAs. HfO2-based MOSCAPs demonstrated the ferromagnetic properties which were attributed to the presence of both cation and anion vacancies according to the first-principle calculations. Room-temperature ferromagnetism in HfO2 films allowed us to propose a structure for the ferromagnetic MOS spin-detector. [ABSTRACT FROM AUTHOR]

Published
2015
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