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We demonstrate that deviations from 1/ f noise behavior found in submicron silicon metal-oxide-semiconductor field-effect transistors operating at room temperature are the direct result of the decomposition of the 1/ f spectrum into its constituent Lorentzian components. In the time domain, these devices produce random telegraph signals due to localized and discrete modulations of the channel resistance caused by individual carrier trapping events. [ABSTRACT FROM AUTHOR]

Heterostructure p-n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed. [ABSTRACT FROM AUTHOR]

Low-frequency current noise that has a f-3/2 power law noise spectrum is observed in GaAs field-effect devices. We show that this is due to modulation by a thermally activated and bias-independent voltage noise in the gate. We identify this noise with generation recombination associated with the semi-insulating substrate supporting these devices. Lowering the activation energy of these traps by the drain bias causes instability in this noise process, leading to low-frequency oscillations that have previously been identified with high field domains in the substrate material. [ABSTRACT FROM AUTHOR]

The upper critical field Bc2 provides the most direct measure of the intrinsic anisotropy of a superconductor. For highly oriented, sputtered thin films of the high-temperature superconductor Tl2Ba2CaCu2Ox, we find a Bc2 anisotropy of at least 70, which exceeds similar measurements on thin films and single crystals of the high-temperature superconductors Bi-Sr-Ca-Cu-O and YBa2Cu3Oy. We discuss why the midpoints of the resistive transitions, used in these measurements, may be appropriate for defining the intrinsic Bc2. [ABSTRACT FROM AUTHOR]