1. Gate-tunable gigantic lattice deformation in VO2
- Author
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Hironori Ohashi, Takafumi Hatano, Keisuke Shibuya, Yoshinori Tokura, Daisuke Okuyama, Soshi Takeshita, Samuel Tardif, Masaki Nakano, Masashi Kawasaki, Hiroyuki Ohsumi, Hirokatsu Yumoto, Yoshihiro Iwasa, Masaki Takata, Takahisa Koyama, and Taka-hisa Arima
- Subjects
Phase transition ,Lattice constant ,Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Electric field ,Lattice diffusion coefficient ,Condensed Matter::Strongly Correlated Electrons ,Field-effect transistor ,Crystal structure ,Deformation (meteorology) ,Atmospheric temperature range - Abstract
We examined the impact of electric field on crystal lattice of vanadium dioxide (VO2) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO2 decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.
- Published
- 2014
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