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Bi2O2Se is emerging as a high mobility functional material for optoelectronics, but its fundamental optical properties remain less well studied. Here, ultrafast photocarrier dynamics in single crystal Bi2O2Se is investigated by pump fluence-dependent, broadband ultrafast spectroscopy. Our results reveal that bimolecular recombination plays an important role in the photocarrier relaxation process, and a room-temperature bimolecular recombination constant of (1.29 ± 0.42) × 10−9 cm−3 s−1 is obtained for Bi2O2Se. Such a level of the recombination constant combined with a high mobility (∼1006 cm2 V−1 s−1 at 200 K for Bi2O2Se) suggests that Bi2O2Se can be a promising material for photovoltaic applications.

WTe2 is a unique material in the family of transition metal dichalcogenides and it has been proposed as a candidate for type-II Weyl semimetals. However, thus far, studies on the optical properties of this emerging material have been significantly hindered by the lack of large-area, high-quality WTe2 materials. Here, we grow a centimeter-scale, highly crystalline WTe2 ultrathin film (∼35 nm) by a pulsed laser deposition technique. Broadband pump-probe spectroscopy (1.2–2.5 μm) reveals a peculiar ultrafast optical response where an initial photo-bleaching signal (lasting ∼3 ps) is followed by a long-lived photoinduced absorption signature. Nonlinear absorption characterization using femtosecond pulses confirms the saturable absorption response of the WTe2 ultrathin films, and we further demonstrated a mode-locked Thulium fiber laser using a WTe2 absorber. Our work provides important insights into linear and nonlinear optical responses of WTe2 thin films.

The hot-carrier relaxation dynamics of Cd3As2 thin films has been investigated by using femtosecond pump-probe spectroscopy in a transmission geometry. A comparative study of degenerate and non-degenerate experiments reveals that hot-carrier distribution in Cd3As2 is established with a time constant of ∼400 fs. Significantly, the broadband measurements allow the extraction of the time evolution of electron temperature and the carrier-phonon coupling factor g = 5.3 × 1015 W m−3 K−1 is deduced by a semiclassical two-temperature model. These results provide fundamental insights into the hot-carrier dynamics of Cd3As2.