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An oxygen-based ionic synaptic transistor (O-IST) is a promising synaptic element for neuromorphic computing. In this study, we demonstrated that the density of the electrolyte plays a key role in achieving excellent synaptic characteristics in an O-IST. In a Pr0.7Ca0.3MnO3-based O-IST, we precisely controlled the density of the HfOx electrolyte and found that a low-density electrolyte could improve the ion mobility. Owing to the improved ion mobility and controlled ion migration, we demonstrated that excellent synaptic characteristics, such as a wide dynamic range, linear weight update, low operating voltage operations, and stable cyclic operation, were achieved. Finally, we confirmed an improved pattern recognition accuracy using an O-IST with an HfOx electrolyte of optimal density.