1. Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser.
- Author
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Xiang Li, Hong Wang, Zhongliang Qiao, Xin Guo, Geok Ing Ng, Yu Zhang, Zhichuan Niu, Cunzhu Tong, and Chongyang Liu
- Subjects
MODE-locked lasers ,QUANTUM well lasers ,INDIUM gallium arsenide ,INDIUM antimonide ,BANDWIDTHS ,ELECTRIC potential - Abstract
Passive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (V
a ) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va . The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va . Our findings provide guidelines for output characteristics of the mode-locked laser. [ABSTRACT FROM AUTHOR]- Published
- 2017
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