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Optical positioning through a position-sensitive detector (PSD) is a central technique for diverse applications, including laser guidance, pilotless automobiles, aerospace, real-time tracking, and robotics. However, both commercially segmented PSD and the lateral photovoltaic effect PSD reported so far suffer from serious nonlinearity, leading to distortion of position. Herein, we propose an ultrahigh-precise optical positioning method through a deep learning-assisted thermoelectric model. Specifically, we design a PbSe thermoelectric photodetector with twelve electrodes endowing the output of the photo-thermoelectric voltage matrix, which is highly laser position-correlated. As a result, the original location is accurately reconstructed through a regression-based convolutional neural network algorithm, giving rise to a nonlinearity of 0.3% with precision as high as 98.7%. Finally, our thermoelectric deep optical positioner fully recovers the moving path of a target defined by alphabets, numbers, or random trajectory, indicating its great potential in the applications of optical writing, robot guidance, and optical navigation. [ABSTRACT FROM AUTHOR]

The low thermal conductivity of β-Ga2O3 is a significant concern for maximizing the potential of this ultra-wide bandgap semiconductor as a power switching device technology. Here, we report on the use of nanocrystalline diamond (NCD) deposited via microwave plasma enhanced chemical vapor deposition (MP-CVD) as a top-side, device-level thermal management solution on a lateral β-Ga2O3 transistor. NCD was grown via MP-CVD on β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures prior to the gate formation of the field-effect transistor. A reduced growth temperature of 400 °C and a SiNx barrier layer were used to protect the oxide semiconductors from etching in the MP-CVD H2 plasma environment. Raman spectroscopy showed a highly sp3-bonded NCD film was obtained at 400 °C, with grain size of about 50–100 nm imaged via atomic force microscopy. The incorporation of the NCD heat-spreading layer resulted in a β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure field-effect transistor showing a decrease in the total thermal resistance at the gate by 42%. The fabrication process, including the NCD etch in the gate region, will need to be improved to minimize the impact of these processes on important device characteristics (i.e., drain current, threshold voltage, and leakage current). [ABSTRACT FROM AUTHOR]

The origin of the threshold voltage (Vth) shift that occurs in ON-state biased AlGaN/GaN high-electron mobility transistors (HEMTs) is proposed in terms of experimental researches and first-principles calculations. Experimentally, ∼20% negative shift of the Vth is found for the 0.2 μm gate length T-gate AlGaN/GaN HEMT under the ON-state stress. 1/f noise measurements are carried out to investigate the evolution of defect distribution in the GaN channel, which indicates that the Vth shift is accompanied by the diminishing of the defect level of Ev + 0.8 eV. Combined with first-principles studies based on hybrid functionals defect calculations, we find that the defect evolution of O from negatively charged VGa-ON to neutral ON-H gives rise to the decrease in acceptors in the GaN channel and thus the negative shift of Vth. Our work indicates that the strengthening of oxygen-related defects in GaN during material growth and device fabrication would improve the reliability of AlGaN/GaN HEMTs. [ABSTRACT FROM AUTHOR]

β-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultrawide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from β-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to AlGaN/GaN interfaces, β-(AlxGa1−x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas where joule heating is localized. The thermal properties of β-(AlxGa1−x)2O3/Ga2O3 are the key for heat dissipation in these devices, while they have not been studied before. This work reports the temperature dependent thermal conductivity of β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature compared to that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn doping. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of β-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications, especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices. [ABSTRACT FROM AUTHOR]