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In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi2 Ta2O9 (300nm) as ferroelectric thin film and HfTaO (6nm, 8nm, 10nm, and 12nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time. [ABSTRACT FROM AUTHOR]

Uniaxial tensile measurements have been performed on [0001]-oriented zinc oxide nanowires (NWs) with diameters ranging from 18 to 204 nm using a homemade in situ mechanical testing system. Diameter dependence of tensile modulus (TM) is further compared with that of bending modulus (BM, shown earlier). With diameters of NWs decreasing in an intermediate range (about 30–120 nm), TM increases slower than BM, while it gets close to the latter with diameters decreasing below 30 nm; for rather large diameters, they both tend to the bulk modulus. A core-shell model is developed based on diameter-dependent and radial-distributed elastic stiffening in NWs and well explains our experimental results. [ABSTRACT FROM AUTHOR]

The double-exposure electron holographic technique has been put into practical use for the first time. By this method an accurate recording of the distribution of electric and magnetic fields can be directly obtained by the electron microscope without resorting to sophisticated optical manipulation of the holograms. Problems concerning the operative definition of the contour maps are discussed. Experimental results are presented. [ABSTRACT FROM AUTHOR]