371 results on '"Chang, Y."'
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2. Energy loss due to defect formation from 206Pb recoils in SuperCDMS germanium detectors
3. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
4. Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices
5. Energy loss due to defect formation from 206Pb recoils in SuperCDMS germanium detectors.
6. Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]
7. Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation
8. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2.
9. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition.
10. Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices.
11. Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs
12. Room temperature ferromagnetism in Co-doped amorphous carbon composites from the spin polarized semiconductor band
13. Spectral dependence of third-order nonlinear optical properties in InN
14. Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform
15. Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study
16. Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si
17. Optical properties of AlAsxSb1−x alloys determined by in situ ellipsometry
18. Sensing H+ with conventional neural probes
19. Interband transitions and dielectric functions of InGaSb alloys
20. Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
21. Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films
22. Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation
23. Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
24. Dielectric functions and interband transitions of In1−xAlxSb alloys
25. Epitaxial growth and magnetic properties of Fe3O4 films on TiN buffered Si(001), Si(110), and Si(111) substrates
26. Structural and thermal properties of MnSi single crystal
27. The electrostatic coupling of longitudinal optical phonon and plasmon in wurtzite InN thin films
28. High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)
29. Origin of inverse tunneling magnetoresistance in a symmetric junction revealed by delaminating the buried electronic interface
30. Magnetization reversal process of ferromagnetic granular thin films probed by magnetization-induced second harmonic generation
31. Interband transitions of InAsxSb1−x alloy films
32. Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry
33. Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films
34. Carrier and phonon dynamics of wurtzite InN nanorods
35. High external emission efficiency in intentionally ordered GaInP/GaAs structures
36. Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures
37. Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As
38. Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe
39. Coherent trapping of x-ray photons in crystal cavities in the picosecond regime
40. Direct probe of the built-in electric field of Mg-doped a-plane wurtzite InN surfaces with time-resolved electric-field-induced second harmonic generation
41. Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
42. Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As
43. Optical properties of InxAl1−xAs alloy films
44. Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
45. Growth and physical property of epitaxial Co70Fe30 thin film on Si substrate via TiN buffer
46. Erratum: “Control of silicidation in HfO2/Si(100) interfaces” [Appl. Phys. Lett. 86, 041913 (2005)]
47. Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure
48. Microspectroscopic detection of local conducting areas generated by electric-pulse-induced phase transition in VO2 films
49. Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films
50. Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates
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