1. Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers
- Author
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Michael Winkler, Rüdiger Goldhahn, Martin Frentrup, Frank Mehnke, Carsten Netzel, Martin Feneberg, Michael Kneissl, Markus Weyers, Joachim Stellmach, and Tim Wernicke
- Subjects
Photoluminescence ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Wide-bandgap semiconductor ,Optical polarization ,Polarization (waves) ,Molecular physics ,Electric field ,Sapphire ,Optoelectronics ,business ,Luminescence ,Stacking fault - Abstract
We studied the optical polarization of surface-emitted photoluminescence from thick semi-polar (11–22) AlxGa1−xN layers on m-plane sapphire substrates with aluminum contents x between 0.0 and 0.63 at T = 10 K. Luminescence with an electric field vector E parallel to the in-plane direction [1–100] prevails for x 0.2. In case of low aluminum content, the spectra are dominated by basal plane stacking fault emission. The degree of optical polarization for both basal plane stacking fault emission and near band edge emission is comparable.
- Published
- 2014