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Start Over Author "Cammarata R" Journal applied physics letters
17 results on '"Cammarata R"'

14. NiSi2 precipitation in nickel-implanted silicon films.

Author

Cammarata, R. C., Thompson, C. V., and Tu, K. N.

Subjects
*SILICIDES, *THIN films, *AMORPHOUS substances
Abstract

We report on the formation of nickel silicide in nickel-implanted amorphous silicon thin films. We have found that during annealing, precipitates of NiSi2 form in the interior of the film. This is in contrast with results for interfacial reactions between nickel films and silicon, where the first phases to appear are Ni2Si and NiSi on amorphous silicon, and Ni2Si on crystalline silicon. We suggest that these results reflect differences in surface energies and their effects on silicide nucleation. [ABSTRACT FROM AUTHOR]

Published
1987
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15. Reaction kinetics of nickel/silicon multilayer films.

Author

Clevenger, L. A., Thompson, C. V., Cammarata, R. C., and Tu, K. N.

Subjects
CALORIMETRY, DYNAMICS, TEMPERATURE, SILICIDES
Abstract

We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni2 Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre-exponential is found to be 6 cm-2s-1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni2 Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (<125 Å) reacted explosively at room temperature to form Ni2 Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation. [ABSTRACT FROM AUTHOR]

Published
1988
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