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Your search keyword '"Barquinha, Pedro"' showing total 10 results
Start Over Author "Barquinha, Pedro" Journal applied physics letters
10 results on '"Barquinha, Pedro"'

6. Write-erase and read paper memory transistor

Author

Martins, Rodrigo, primary, Barquinha, Pedro, additional, Pereira, Luís, additional, Correia, Nuno, additional, Gonçalves, Gonçalo, additional, Ferreira, Isabel, additional, and Fortunato, Elvira, additional

Published
2008
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9. Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing.

Author

Fortunato, Elvira, Barros, Raquel, Barquinha, Pedro, Figueiredo, Vitor, Sang-Hee Ko Park, Chi-Sun Hwang, and Martins, Rodrigo

Subjects
ANNEALING of metals, THIN film transistors, SOLID state electronics, MAGNETRONS, SEMICONDUCTORS
Abstract

P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x<2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈1016–1018 cm-3; electrical resistivity between 101–102 Ω cm; Hall mobility around 4.8 cm2/V s; optical band gap of 2.8 eV; and average transmittance ≈85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2/V s and an ON/OFF modulation ratio of 103. [ABSTRACT FROM AUTHOR]

Published
2010
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10. Thin-film transistors based on p-type Cu2O thin films produced at room temperature.

Author

Fortunato, Elvira, Figueiredo, Vitor, Barquinha, Pedro, Elamurugu, Elangovan, Barros, Raquel, Gonçalves, Gonçalo, Sang-Hee Ko Park, Chi-Sun Hwang, and Martins, Rodrigo

Subjects
EFFECT of radiation on transistors, THIN-film circuits, METALLIC oxides, SOLID state electronics, POLYCRYSTALLINE semiconductors, COPPER oxide
Abstract

Copper oxide (Cu2O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2/V s and an on/off ratio of 2×102. [ABSTRACT FROM AUTHOR]

Published
2010
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