1. Interband type-II miniband-to-bound state diode lasers for the midinfrared
- Author
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Joachim Wagner, Markus Walther, C. Mermelstein, Rudolf Kiefer, Johannes Schmitz, and Publica
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,GaInSb ,law.invention ,Semiconductor laser theory ,Gallium arsenide ,diode laser ,chemistry.chemical_compound ,Optics ,AlGaAsSb ,InAs ,law ,mittleres Infrarot ,Quantenfilm ,Diode ,Übergitter ,business.industry ,Slope efficiency ,superlattice ,mid-infrared ,Injection seeder ,Laser ,characteristic temperature ,chemistry ,charakteristische Temperatur ,quantum-well ,Optoelectronics ,W-Laser ,business ,Current density ,Diodenlaser ,Molecular beam epitaxy - Abstract
A design for midinfrared diode lasers based on interband type-II miniband-to-bound state transitions is proposed and has been demonstrated experimentally. Type-II miniband-to-bound state laser structures emitting at 3.25 mu with active regions consisting of 5 and 10 W periods were grown by solid-source molecular-beam epitaxy and processed into ridge waveguide lasers. Substrate-side down mounted devices with a 10 period active region and uncoated facets could be operated in continuous-wave (cw) mode up to 185 K and as high as 260 K in pulsed mode. A high characteristic temperature of 100 K has been achieved for heat-sink temperatures below 140 K, decreasing to 33 K for the 140 to 185 K interval. At 110 K, a 5 period laser structure exhibited a threshold current density of 177 A/cm2and a slope efficiency of 61 mW/A. Single-ended output powers of 144 mW in cw mode and exceeding 330 mW in pulsed operation were obtained for a substrate-side down mounted 5 period diode laser with high-reflection/antireflection coated mirror facets, operated at 110 K.
- Published
- 2004
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